Self-Assembled Low-Power In-Plane-Gate Transparent Oxide-Based Thin Film Transistors Gated by Atomic-Layer-Deposited Al2O3

Guo Dong Wu; Hong Liang Zhang; Zhao Jun Guo

doi:10.4028/www.scientific.net/AMR.773.673

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 773Self-Assembled Low-Power In-Plane-Gate Transparent...

Self-Assembled Low-Power In-Plane-Gate Transparent Oxide-Based Thin Film Transistors Gated by Atomic-Layer-Deposited Al₂O₃

Abstract:

We report the application of one-shadow-mask self-assembled method for fabricating low-voltage transparent oxide-based thin film transistors (TFTs) gated by atomic-layer-deposited Al₂O₃with in-plane-gate configuration. These in-plane-gate TFTs exhibit a good device performance with a small subthreshold swing (300 mV/decade), a large on/off ratio (10⁶), and a low operation voltage (5V). The leakage current for in-plane-gate TFT is actually significantly lower, compared with TFT with bottom-gate configuration. This work has provided a good route for fabricating low-power transparent electronics using simple processing method.

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Periodical:

Advanced Materials Research (Volume 773)

Pages:

673-677

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.773.673

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Online since:

September 2013

Authors:

Guo Dong Wu, Hong Liang Zhang, Zhao Jun Guo

Keywords:

Atomic-Layer-Deposited Al₂O₃, Low Power, Self-Assembly, Thin-Film Transistors

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