P-Doped SiO2 Proton Conducting Films for Low Voltage Thin Film Transistors

Li Qiang Guo; Zhao Jun Guo; Yuan Yuan Yang; Ju Mei Zhou

doi:10.4028/www.scientific.net/AMR.773.660

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 773P-Doped SiO2 Proton Conducting Films for Low...

P-Doped SiO₂ Proton Conducting Films for Low Voltage Thin Film Transistors

Abstract:

P-doped SiO₂ were prepared by PECVD and one metal shadow mask self-assembled method was used for fabricating oxide thin film transistors gated by such proton conductors. Proton conduction of these films was demonstrated and electrical characteristics of oxide thin film transistors gated by such proton conductors were discussed. Due to excellent proton conduction and big capacitance density, oxide thin film transistors gated by such proton conductors have obtained excellent performances with mobility of 48.39 cm²/Vs, threshold voltage of-0.36 V, subthreshold swing of 0.13 V/decade, I_on/off ratio of 3.2×10⁶ with the relative humidity of 30% at the room temperature.

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Periodical:

Advanced Materials Research (Volume 773)

Pages:

660-663

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.773.660

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Online since:

September 2013

Authors:

Li Qiang Guo, Zhao Jun Guo, Yuan Yuan Yang, Ju Mei Zhou

Keywords:

Oxide Thin Film Transistors, P-Doped SiO₂, Proton Conduction

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