Drift Velocity of Hot Carriers in a-Se Photoconductive Target

Abstract:

Avalanche multiplication of the 0.4-μm-thick a-Se HARP (High-gain Avalanche Rushing amorphous Photoconductor) target was obtained at a high electric field. To study the drift velocity of hot carriers in the a-Se layer, the energy-and field-dependent energy relaxation length was considered in the lucky-drift model. The impact ionization energy E_I of 2.0 eV and the optical phonon energy ћω of 31 meV for a-Se were used to obtain the impact ionization parameters in the a-Se layer. The drift velocity of hot carriers at 1×10⁸ V/m in the 0.4-μm-thick a-Se HARP target was obtained as 1.87×10⁶ cm/s. The drift velocity of hot carriers saturates as the electric field and the avalanche multiplication factor increase. In the 0.4-μm-thick a-Se HARP target, the relaxation length ratio λ_E/λ and the relaxation time ratio τ_E/τ saturate as the avalanche multiplication factor increases. In addition, the relaxation length ratio λ_E/λ and the relaxation time ratio τ_E/τ at 1×10⁸ V/m were 2.75 and 14.66, respectively.

• Periodical: Advanced Materials Research (Volume 787)
• Pages: 337-340
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.787.337
• Online since: September 2013
• Authors: Wug Dong Park, Kenkichi Tanioka
• Keywords: Amorphous Selenium, Avalanche Multiplication, Drift Velocity, Energy Relaxation Length, Impact Ionization, Momentum Relaxation Length

References

[1] K. Tanioka, J. Yamazaki, K. Shidara, K. Taketoshi, T. Kawamura, S. Ishioka and Y. Takasaki: IEEE Electron Device Lett. Vol. EDL-8 (1987), p.392.

DOI: 10.1109/edl.1987.26671

[2] M. Kubota, T. Kato, S. Suzuki, H. Maruyama, K. Shidara, K. Tanioka, K. Sameshima, T. Makishima, K. Tsuji, T. Hirai and T. Yoshida: IEEE Trans. Broadcast. Vol. 42 (1996), p.251.

DOI: 10.1109/11.536588

[3] K. Tanioka, T. Matsubara, Y. Ohkawa, K. Miyakawa, S. Suzuki, T. Takahata, N. Egami, K. Ogusu, A. Kobayashi, T. Hirai, T. Kawai, M. Hombo and T. Yoshida: IEICE Trans. Electron. Vol. E86-C (2003), p.1790.

DOI: 10.1117/12.585434

[4] Y. Ohkawa, K. Miyakawa, T. Matsubara, K. Kikuchi, S. Suzuki, M. Kubota, N. Egami and A. Kobayashi: IEICE Trans. Electron. Vol. E92-C (2009), p.894.

DOI: 10.1587/transele.e92.c.894

[5] Y. Takiguchi, H. Maruyama, M. Kosugi, F. Andoh, T. Kato, K. Tanioka, J. Yamazaki, K. Tsuji and T. Kawamura: IEEE Trans. Electron Devices Vol. 44 (1997), p.1783.

DOI: 10.1109/16.628837

[6] W. Zhao, D. Li, A. Reznik, B.J.M. Lui, D.C. Hunt, J.A. Rowlands, Y. Ohkawa and K. Tanioka: Med. Phys. Vol. 32 (2005), p.2954.

[7] T. Miyoshi, N. Igarashi, N. Matsugaki, Y. Yamada, K. Hirano, K. Hyodo, K. Tanioka, N. Egami, M. Nanba, M. Kubota, T. Kawai and S. Wakatsuki: J. Synchrotron Rad. Vol. 15 (2008), p.281.

DOI: 10.1107/s0909049508006584

[8] G. Juska, K. Arlauskas and E. Montrimas: J. Non-Cryst. Solids Vol. 97 & 98 (1987), p.559.

[9] G. Juska and K. Arlauskas: phys. stat. sol. (a) Vol. 59 (1980), p.389.

[10] G. Juska and K. Arlauskas: phys. stat. sol. (a) Vol. 77 (1983), p.387.

[11] S. Kasap, J.A. Rowlands, S.D. Baranovskii and K. Tanioka: J. Appl. Phys. Vol. 96 (2004), p. (2037).

[12] A. Reznik, S.D. Baranovskii, O. Rubel, G. Juska, S.O. Kasap, Y. Ohkawa, K. Tanioka and J.A. Rowlands: J. Appl. Phys. Vol. 102 (2007), p.053711.

DOI: 10.1063/1.2776223

[13] K. Jandieri, O. Rubel, S.D. Baranovskii, A. Reznik, J.A. Rowlands and S.O. Kasap: phys. stat. sol. (c) Vol. 5 (2008), p.796.

[14] W. -D. Park and K. Tanioka: Jpn. J. Appl. Phys. Vol. 42 (2003), p. L209.

[15] W. -D. Park and K. Tanioka: Jpn. J. Appl. Phys. Vol. 48 (2009), p. 04C159.

[16] K. Tsuji, T. Ohshima, T. Hirai, N. Gotoh, K. Tanioka and K. Shidara: Mat. Res. Soc. Symp. Proc. Vol. 219 (1991), p.507.

[17] S.M. Sze: Physics of Semiconductor Devices, 2nd ed. (John Wiley & Sons, New York, 1981).

[18] A. Reznik, S.D. Baranovskii, O. Rubel, K. Jandieri, S.O. Kasap, Y. Ohkawa, M. Kubota, K. Tanioka, J.A. Rowlands: J. Non-Cryst. Solids Vol. 354 (2008), p.2691.

DOI: 10.1016/j.jnoncrysol.2007.09.058

[19] E. Bringuier: Phys. Rev. B Vol. 49 (1994), p.7974.