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Charge Trapping Properties of Au Nanocrystals with Various Sizes for Non-Volatile Memory Applications

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Abstract:

Charge trapping properties of Au nanocrystals (NCs) with various sizes and densities embedded in metal oxide semiconductor (MOS) were investigated. Comparing with the Nc size, experimental results show that the NC spacing is more influential in electron trapping. Au NCs with the size of 8~13nm have larger memory window than the Au NCs of 13-17nm and 6-8nm, which can be ascribe to the higher field-enhancement effect caused by the larger NC spacing. Optimized NC size can improve the specific characteristic of memory device effectively.

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Periodical:

Advanced Materials Research (Volume 787)

Pages:

367-371

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.787.367

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Online since:

September 2013

Authors:

Rui Fan Tang, Kai Huang, Guang Yang Lin, Huan Da Wu, Chen Li, Hong Kai Lai

Keywords:

Charge Trapping, Density, Nanocrystal Sizes, Non-Volatile Memory (NVM), Spacing

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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