Research on the Low Temperature Degradation Resistance of TiN/3Y-TZP

Article Preview

Abstract:

The composite materials TiN/3Y-TZP, 3Y-TZP doped by TiN with different contents and particle sizes, were fabricated through the same hot-pressing techniques. Compared with 3Y-TZP, the low temperature degradation resistance of TiN/3Y-TZP aged at the temperature from 170°C to 350°C in air for 50 h was investigated in virtue of XRD and SEM in the experiment. For TiN/3Y-TZP and 3Y-TZP, the maximum aging rate all occurs at 220°C. The addition of TiN can availably improve the low temperature degradation resistance of 3Y-TZP at different aging temperatures, but cannot change the relationship between the aging rate and the aging temperature. For TiN/3Y-TZP, the matrix particle size is the key factor responsible for its low temperature degradation resistance.

You might also be interested in these eBooks

Info:

Periodical:

Advanced Materials Research (Volumes 79-82)

Pages:

287-290

Citation:

Online since:

August 2009

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2009 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] S. Lawson: J. Eur. Ceram. Soc. Vol. 15 (1995), p.485.

Google Scholar

[2] S. Chen and H. Lu: J. Mater. Sci. Vol. 23 (1988), p.1195.

Google Scholar

[3] J. Chevalier, B. Cales and J.M. Drouin: J. Am. Ceram. Soc. Vol. 82 (1999), p.2150.

Google Scholar

[4] D.J. Kim, H.J. Jung and D.H. Cho: J. Solid State Ionics Vol. 80 (1995), p.67.

Google Scholar

[5] D.Y. Lee, D.J. Kim, J.W. Jang, D.W. Choi and S.J. Lee: Mater. Lett. Vol. 39 (1999), p.221.

Google Scholar

[6] T. Sato, H. Fujishiro and T. Endo: J. Mater. Sci. Vol. 22 (1987), p.882.

Google Scholar

[7] J. Sun, C.Z. Huang, H.L. Liu and S.L. Wang: Mater. Sci. Forum Vol. 471-472 (2004), p.321.

Google Scholar

[8] S.L. Ran and L. Gao: Mater. Sci. Eng., A Vol. 447 (2007), p.83.

Google Scholar

[9] J. Sun, C.Z. Huang and J. Wang: Key Eng. Mater. Vol. 315-316 (2006), p.40.

Google Scholar

[10] T. Sato, S. Ohtaki, and M. Shimada: J. Mat. Sci. Vol. 20 (1985), p.1466.

Google Scholar