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Molecular Dynamics Simulation of Thermal Conductivity of 3C-SiC Nanowire
Abstract:
SiC is one of the most important third-generation semiconductors, which has important application value. Based on the nonequilibrium Molecular Dynamics method, a model of 3C-SiC nanowire is proposed, and thermal transport under different temperatures is investigated. The results show about 200K the thermal conductivity of 3C-SiC nanowire approaches to the peak 7.84W/m.K.
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210-212
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September 2013
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© 2013 Trans Tech Publications Ltd. All Rights Reserved
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