High Breakdown Voltage GaN Power HEMT on Si Substrate

Cen Kong; Jian Jun Zhou; Jin Yu Ni; Yue Chan Kong; Tang Sheng Chen

doi:10.4028/www.scientific.net/AMR.805-806.948

Paper Titles

Design on Synchronize Debugging Device for Extra High Voltage Transmission Line Longitudinal Protection
p.926

Defects Analysis and Reconstruction for 10kV Circuit Breaker
p.930

Electromagnetic - Electromechanical Transient Hybrid Simulation of Deyang-Baoji HVDC System Based on ADPSS
p.935

Influence of Eddy Current Effect on the Circuit Breaker Contact Mechanism Heat Loss
p.943

High Breakdown Voltage GaN Power HEMT on Si Substrate
p.948

Position Sensorless DTC of BLDC Motor Driver Based on Sliding Mode Observer
p.954

Output Impedance Modified Based Waveform Control for Single Phase Inverter
p.958

Induction Motor Fault Diagnosis Using Voltage Spectrum of Auxiliary Winding and Lissajous Curve of its Park Components
p.963

An Information Security Assessments Framework for Power Control Systems
p.980

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 805-806High Breakdown Voltage GaN Power HEMT on Si...

High Breakdown Voltage GaN Power HEMT on Si Substrate

Abstract:

GaN high electronic mobility transistor (HEMT) was fabricated on silicon substrate. A breakdown voltage of 800V was obtained without using field plate technology. The fabrication processes were compatible with the conventional GaN HEMTs fabrication processes. The length between drain and gate (L_gd) has a greater impact on breakdown voltage of the device. A breakdown voltage of 800V with maximum current density of 536 mA/mm was obtained while L_gd was 15μm and the W_g was 100μm. The specific on-state resistance of this devices was 1.75 mΩ·cm², which was 85 times lower than that of silicon MOSFET with same breakdown voltage. The results establish the foundation of low cost GaN HEMT power electronic devices.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 805-806)

Pages:

948-953

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.805-806.948

Citation:

Cite this paper

Online since:

September 2013

Authors:

Cen Kong*, Jian Jun Zhou, Jin Yu Ni, Yue Chan Kong, Tang Sheng Chen

Keywords:

Breakdown Voltage, GaN HEMT on Silicon, Low-Cost, Power Electronic Device

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] Nariaki Ikeda, Yuki Niiyama, Hiroshi Kambayashi, et al, GaN Power Transistors on Si Substrates for Switching Applications, Proceedings of the IEEE, vol. 98, No. 7, July 2010, pp: 1151-1161.

DOI: 10.1109/jproc.2009.2034397

Google Scholar

[2] J. Shealy, J. Smart, M. Poulton, et al, Gallium nitride (GaN) HEMT's: Progress and potential for commercial applications, in Gallium Arsenide Integr. Circuit Symp. Dig., Oct. 2002, p.243–246.

DOI: 10.1109/gaas.2002.1049069

Google Scholar

[3] Marinne Germain, IMEC enlarges nitride epiwafers, Compound Semiconductor, 2008, pp: 23-25.

Google Scholar

[4] Rongming Chu, Andrea Corrion, Mary Chen, et al, 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic On-Resistance, IEEE ELECTRON DEVICE LETTERS, Vol. 32, No. 5, May 2011, pp: 632-634.

DOI: 10.1109/led.2011.2118190

Google Scholar

[5] A. Fontsere, A. Perez-Tomas, V. Banu, et al, A HfO2 based 800V/300℃ Au-free AlGaN/GaN-on-Si HEMT Technology, Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, 3-7 June 2012-Bruges, Belgium, pp: 37-40.

DOI: 10.1109/ispsd.2012.6229017

Google Scholar

[6] Zhongda Li, John Waldron, Rohan Dayal, et al, High Voltage Normally-off GaN MOSC-HEMTs on Silicon Substrates for Power Switching Applications, Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, 3-7 June 2012-Bruges, Belgium, pp: 45-48.

DOI: 10.1109/ispsd.2012.6229019

Google Scholar

[7] WWW. IRF. COM.

Google Scholar