Bottom-Gate Thin-Film Transistors Fabricated by Excimer Laser Annealing

Jyh Liang Wang; Chun Chien Tsai; Chuan Chou Hwang; Tsang Yen Hsieh

doi:10.4028/www.scientific.net/AMR.811.177

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 811Bottom-Gate Thin-Film Transistors Fabricated by...

Bottom-Gate Thin-Film Transistors Fabricated by Excimer Laser Annealing

Abstract:

High performance and device uniformity n-channel low-temperature poly-silicon (LTPS) bottom-gate (BG) thin film transistors (TFTs) with artificially-controlled lateral grain growth have been performed by excimer laser crystallization (ELC). The BG TFTs (W/L = 1.5 μm/1.5 μm) demonstrate field-effect-mobility of 323 cm²/Vs and high I_on/I_off of 9.5 × 10⁸. The proposed BG TFTs reveal the superior electrical characteristics, device uniformity, and reliability than conventional top-gate ones.

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Periodical:

Advanced Materials Research (Volume 811)

Pages:

177-180

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.811.177

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Online since:

September 2013

Authors:

Jyh Liang Wang, Chun Chien Tsai, Chuan Chou Hwang, Tsang Yen Hsieh

Keywords:

Bottom-Gate (BG), Excimer Laser Crystallization (ELC), Low-Temperature Polycrystalline Silicon (LTPS), Thin-Film Transistors (TFTs)

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References

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