Light-Response Characteristics of Platinum Doped Silicon Photodetector

Budsara Nararug; Surada Ueamanapong; Itsara Srithanachai; Supakorn Janprapha; Ai Lada Suwanchatree; Surasak Niemcharoen; Rangson Muanghlua; Nipapan Klunngien

doi:10.4028/www.scientific.net/AMR.811.196

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 811Light-Response Characteristics of Platinum Doped...

Light-Response Characteristics of Platinum Doped Silicon Photodetector

Abstract:

The purposeof this research article is present electrical characteristic of Pt-doped silicon photodetector compare with undoped silicon photodetector. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Pt-doped detector were investigated. In this experiment, the results of Pt-doped detector show that the dark currentisobviously decreased and the photocurrent is decreased about 9 to 10 orders. Furthermore, the capacitance characteristic isslightly increased about 0.15 pF. The effects platinum on silicon indicated the carrier in silicon have been changed.

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Periodical:

Advanced Materials Research (Volume 811)

Pages:

196-199

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.811.196

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Online since:

September 2013

Authors:

Budsara Nararug, Surada Ueamanapong, Itsara Srithanachai, Supakorn Janprapha, Ai Lada Suwanchatree, Surasak Niemcharoen, Rangson Muanghlua, Nipapan Klunngien

Keywords:

Light-Response, Photocurrent, Platinum, Silicon Photodetector

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