Influence of Platinum on Electrical Propertires of Silicon Schottky Diode

Surada Ueamanapong; Itsara Srithanachai; Budsara Nararug; Supakorn Janprapha; Ai Lada Suwanchatree; Surasak Niemcharoen; Nipapan Klunngien; Amporn Poyai

doi:10.4028/www.scientific.net/AMR.811.192

Paper Titles

Corrosion Characterization of High Moment Magnetic Material Coated with Diamond-Like Carbon
p.171

Bottom-Gate Thin-Film Transistors Fabricated by Excimer Laser Annealing
p.177

Synthesis and Luminescent Properties of Red Phosphor BaY₂O₄: Eu³⁺ for White Light-Emitting Diodes
p.181

Study of Plasmon Fields Propagation on Roughness Metal Surfaces
p.186

Influence of Platinum on Electrical Propertires of Silicon Schottky Diode
p.192

Light-Response Characteristics of Platinum Doped Silicon Photodetector
p.196

Minority Carrier Lifetime Controlling of Mesa Diodes by Electron Beam Irradiation
p.200

The Study of Beam Collimating, Optical Index of Refraction and Birefringence Measurement
p.205

Relationship between Microstructure and Mechanical Properties for Recycled Aggregate Concrete
p.213

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 811Influence of Platinum on Electrical Propertires of...

Influence of Platinum on Electrical Propertires of Silicon Schottky Diode

Abstract:

The purpose of the paper is present the new result of electrical properties of Pt-doped silicon Schottky diodes that are fabricated by using CMOS technology. The results show the comparison of electrical properties namely current-voltage and capacitance characteristics between undoped and Pt-doped Schottky diode. The current characteristics of Pt-doped diode are decreased about 2 to 3 orders in term of reverse bias. As well as in case of forward bias, the current is slightly decreased. Schottky barrier height after Pt doping was increased from 0.84 eV to 0.86 eV. The built-in voltage of Pt-doped diodes was increased from 0.38 V to 0.42 V. The C-V characteristics after Pt doping is decreased about 5 pF. The change of electrical properties are caused by Pt because Pt atoms in silicon can occupy interstitial sites and change the trapping center. This paper will study and analyze the effect of Pt atom in silicon bulk of Schottky diode.

You might also be interested in these eBooks

Modern Materials and Technologies of Industrial Production

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 811)

Pages:

192-195

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.811.192

Citation:

Cite this paper

Online since:

September 2013

Authors:

Surada Ueamanapong, Itsara Srithanachai, Budsara Nararug, Supakorn Janprapha, Ai Lada Suwanchatree, Surasak Niemcharoen, Nipapan Klunngien, Amporn Poyai

Keywords:

Built-in Voltage, Capacitance-Voltage, Current-Voltage, Interstitial Site, Platinum, Schottky Barrier, Silicon Bulk

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] X.Y. Liang, J.H. Min, J. Chen, D. Wang, H. Li, Y. Wang, L.J. Wang and J. J Zhang: Phys. Procedia, Vol. 32 (2012), pp.545-550.

Google Scholar

[2] Shing-Dar Wang, Sanboh Lee and Chun-Hway Hsueh: Mech. Mater, Vol. 33 (2001), pp.105-120.

Google Scholar

[3] M.A. Yeganeh and R.K. Mamedov: Superlattices Microstruct., Vol. 51 (2012), pp.792-798.

Google Scholar

[4] J. Vobecky and P. Hazdra: submitted to Nuclear Instruments and Methods in Physics Research B 253 (2006), p.162–166.

Google Scholar

[5] J. Prabket, I. Srithanachai, S. Ueamanapong, A. Poyai and S. Niemcharoen: Avd. Mater. Res., Vol. 378-379 (2012), pp.6060-609.

DOI: 10.4028/www.scientific.net/amr.378-379.606

Google Scholar

[6] J. Prabket, I. Srithanachai, S. Ueamanapong, A. Poyai, W. Titiroongruang, S. Niemcharoen, and P. P. Yupapin: submitted to Scientific Research and Essays, Vol. 7(11) (2012), pp.1230-1236.

Google Scholar

[7] A. Poyai, in: Defects assessment in advanced semiconductor materials and devices, Ph. D Thesis (2002), Katholieke Universiteit Leuven, Belgium.

Google Scholar

[8] Z. Wang, M. Zhu, X. Chen, Q. Yan and J. Zhang: Microeletron. Eng., Vol. 103 (2013), pp.36-41.

Google Scholar

[9] S.M. Sze, in: Physics of Semiconductor Devices , John Wiley & Sons (1981), New York.

Google Scholar

[10] I. Srithanachai, S. Ueamanapong, P. Rujunapich, N. Atiwongsangthong, S. Niemcharoen, A. Poyai and W. Titiroongruang: Mater. Sci. Forum., Vol. 695 (2011), pp.569-572.

DOI: 10.4028/www.scientific.net/msf.695.569

Google Scholar

[11] I. Srithanachai and S. Niemcharoen: Adv. Sci. Lett., Vol. 19 (2013), pp.670-673(4).

Google Scholar

[12] S. Ueamanapong, I. Srithanachai, N. Atiwongsangthong, N. Klunngien, A. Poyai and S. Niencharoen: Adv. Sci. Lett., Vol. 19 (2013), pp.997-1000(4).

DOI: 10.1166/asl.2013.4800

Google Scholar