Minority Carrier Lifetime Controlling of Mesa Diodes by Electron Beam Irradiation

Wiwa Titthikusumarn; Wittaya Jakpetch; Wisut Titiroongruang

doi:10.4028/www.scientific.net/AMR.811.200

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Influence of Platinum on Electrical Propertires of Silicon Schottky Diode
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Minority Carrier Lifetime Controlling of Mesa Diodes by Electron Beam Irradiation
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 811Minority Carrier Lifetime Controlling of Mesa...

Minority Carrier Lifetime Controlling of Mesa Diodes by Electron Beam Irradiation

Abstract:

Mesa diodes were irradiation by electron beam at various doses of 25, 50 and 75 kGy to find optimum dose for controlling minority carrier lifetime. The experiment result shows that electron beam can reduce minority carrier lifetime from 24.3 ns to 14.8, 9.5 ns and 7.9 at dose of 25, 50 and 75 kGy, respectively. However, the result of electron beam is not only reduce the lifetime but also effected to other electrical properties such as increasing in saturation current density about 2-3 times, increasing in reverse leakage current density about 3 times. Dominant cause of reverse leakage is increasing in generation current via center traps which formed by the irradiation.

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Periodical:

Advanced Materials Research (Volume 811)

Pages:

200-204

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.811.200

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Online since:

September 2013

Authors:

Wiwa Titthikusumarn, Wittaya Jakpetch, Wisut Titiroongruang

Keywords:

Electron Beam Irradiation, Mesa Diodes, Minority Carrier Lifetime, Passivation Layer, Reverse Recovery Time

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