Effects of H2 Flow Rate and H2 Plasma Treatment on the Properties of AZO Films

C.G. Kuo; C.L. Li; C.C. Huang; F.H. Wang; Cheng Fu Yang; I.C. Chen

doi:10.4028/www.scientific.net/AMR.813.447

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 813Effects of H2 Flow Rate and H2 Plasma Treatment on...

Effects of H₂ Flow Rate and H₂ Plasma Treatment on the Properties of AZO Films

Abstract:

In this study, a 1350oC-sintered 98 mol% ZnO-1 mol% Al₂O₃ (AZO, Zn:Al= 98:2) ceramic was used as a target and deposited on glass using a r.f. magnetron sputtering system at a deposition temperature of 200°C. The effects of different H₂ flow rates (H₂/(H₂+Ar)=0% ~ 9.09%, abbreviated as H₂-deposited AZO films) added during the deposition process on the crystallization, resistivity, and optical transmission spectrum of AZO films were investigated. The Burstein-Moss shift effects were measured and used to prove that the defects of AZO films decreased with increasing H₂ flow rate. For comparison, the 2% H₂-deposited AZO films were also treated by the H₂ plasma at room temperature for 60 min (plasma-treated AZO films). The effects of H₂ plasma on the properties of the H₂-deposited AZO films were also studied. The value variations in the optical band gap (E_g) of the H₂-deposited and plasma-treated AZO films were evaluated from the plots of (αhv)² = c (hν-E_g).

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Advanced Materials Research (Volume 813)

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447-451

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https://doi.org/10.4028/www.scientific.net/AMR.813.447

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September 2013

Authors:

C.G. Kuo, C.L. Li, C.C. Huang, F.H. Wang, Cheng Fu Yang, I.C. Chen

Keywords:

AZO, H₂ Plasma, Hydrogen Flow Rate, Optical Band Gap

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