Chemical Bath Deposition of ZnS Buffer Layers

Tai Quan

doi:10.4028/www.scientific.net/AMR.813.435

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 813Chemical Bath Deposition of ZnS Buffer Layers

Chemical Bath Deposition of ZnS Buffer Layers

Abstract:

Chemical bath deposited ZnS thin films are promising buffer layers for thin film solar cells, replacing the environmentally hostile CdS buffer layers currently in use. Reflection, absorption and scattering are the three main light loss mechanisms in buffer layers. In this work, improved process conditions, such as magnetic stirring and air annealing, are used in the chemical bath deposition of ZnS thin films to optimize their surface morphology, which effectively reduces light scattering and increases the transmittance, resulting much better ZnS thin films.

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Periodical:

Advanced Materials Research (Volume 813)

Pages:

435-439

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.813.435

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Online since:

September 2013

Authors:

Tai Quan

Keywords:

Annealing, CBD, Light Loss Mechanisms, Morpholoy, Stirring, ZnS

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References

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