Time Effect of Sulfurization on the Characterization of Copper Indium Diselenide

Ling Jian Kong; Gui Fang Zhu; Jian Qiang Zhong; Kui Xia Han; Xiao Kang Wang

doi:10.4028/www.scientific.net/AMR.816-817.38

Paper Titles

The Influence of Sodium Chloride on the Resulting AAO Film Thickness
p.18

Parametric Optimization of PMEDM Process with Chromium Powder Suspended Dielectric for Triangular Electrodes
p.23

Surface Activation of the Polycarbonate in Atmospheric Pressure Plasma Generated in Air and Helium by Surface Dielectric Barrier Discharge (SDBD)
p.28

Surface Engineering of the Hydrogenated DLC (a-C:H) Coatings with Optimized Mechanical Performance
p.33

Time Effect of Sulfurization on the Characterization of Copper Indium Diselenide
p.38

Material Behavior of Porous Media
p.42

High Power Diode Laser Clad Cu-WC-Ni Composite Coatings on Brass for Wear Resistance Enhancement
p.47

Effect of Temperature on H₂S/CO₂ Corrosion Behaviors of P110-3Cr Steel
p.54

Comparison of Different High-k Dielectric Materials in MOS Device from C-V Characteristics
p.60

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 816-817Time Effect of Sulfurization on the...

Time Effect of Sulfurization on the Characterization of Copper Indium Diselenide

Abstract:

Polycrystalline CuIn(Se,S)2 (CISS) thin films with chalcopyrite structure were synthesized by sol-gel spin-coating method. Sequential reduction, selenization and sulfurization treatments were performed with hydrogen, Se and H2S vapor, respectively. The effects of different sulfurization times on the films were also studyed. X-ray diffraction (XRD), and SEM analysis have been employed to examine the structural properties and surface morphology of polycrystalline CISS thin films. The experimental results demonstrated that the obtained CISS had good crystallinity and uniformity.

You might also be interested in these eBooks

Manufacturing Science and Technology (ICMST2013)

View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 816-817)

Pages:

38-41

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.816-817.38

Citation:

Cite this paper

Online since:

September 2013

Authors:

Ling Jian Kong, Gui Fang Zhu, Jian Qiang Zhong, Kui Xia Han, Xiao Kang Wang

Keywords:

Chalcopyrite, CuIn (Se,S)2, Sol-Gel, Sulfurization

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] Philip Jackson, Dimitrios Hariskos, Erwin Lotter , Stefan Paetel, Roland Wuerz, Richard Menner, Wiltraud Wischmann, and Michael Powalla, New world record efficiency for Cu(In, Ga)Se2 thin-film solar cells beyond 20%, Prog. Photovo lt: Res. Appl. 2011; 19: 894–897.

DOI: 10.1002/pip.1078

Google Scholar

[2] Hollars, D. R.; Dorn, R.; Paulson, P. D.; Titus, J.; Zubeck, R. Mater. Res. Soc. Symp. Proc. 2005, 865, F14. 34. 1.

Google Scholar

[3] V. Alberts: Bandgap engineering in polycrystalline in Cu(In, Ga)(Se, S)2 chalcopyrite thin films. Mater. Sci. Eng., B107, 139 (2004).

Google Scholar

[4] 10. S. Kuranouchi and T. Nakazawa: Study of one-step electrodepo-sition condition for preparation of CuIn(Se, S)2 thin films. Sol. Energy Mater. Sol. Cells 50, 31 (1998).

DOI: 10.1016/s0927-0248(97)00986-0

Google Scholar

[5] M. Engelmann, B.E. McCandless, R.W. Birkmire. Formation and analysis of graded CuIn (Se1-y, Sy)2 films. Thin Solid Films 387 (2001) 14-17.

DOI: 10.1016/s0040-6090(00)01732-6

Google Scholar