Comparison of Different High-k Dielectric Materials in MOS Device from C-V Characteristics

Niladri Pratap Maity; R.K. Thapa; S. Baishya

doi:10.4028/www.scientific.net/AMR.816-817.60

Paper Titles

Time Effect of Sulfurization on the Characterization of Copper Indium Diselenide
p.38

Material Behavior of Porous Media
p.42

High Power Diode Laser Clad Cu-WC-Ni Composite Coatings on Brass for Wear Resistance Enhancement
p.47

Effect of Temperature on H₂S/CO₂ Corrosion Behaviors of P110-3Cr Steel
p.54

Comparison of Different High-k Dielectric Materials in MOS Device from C-V Characteristics
p.60

Review of Physical Properties and Preparation of Nano-Superconducting Materials
p.65

Micro-Shear Properties of Welded Joints of ASTM4130 Steel
p.70

An Experimental Study on Electrical Discharge Machining of Copper Alloy Grade HR750
p.75

Simultaneous Optimization of Ge Doping Profile and Layout in Multi-Finger Power SiGe HBTs for High Thermal Stability
p.80

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 816-817Comparison of Different High-k Dielectric...

Comparison of Different High-k Dielectric Materials in MOS Device from C-V Characteristics

Abstract:

In this paper different characteristic parameters using high-k dielectric materials in Metal Oxide Semiconductor (MOS) device have been compared from the theoretical and simulated Capacitance-Voltage (C-V) graphs. The simulation has been done using ATLAS device simulator. The agreement of the specified values while deriving and simulating and that extracted is excellent. Further, the extracted parameters for high-k dielectric materials show an inferior interfacial quality.

You might also be interested in these eBooks

Manufacturing Science and Technology (ICMST2013)

View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 816-817)

Pages:

60-64

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.816-817.60

Citation:

Cite this paper

Online since:

September 2013

Authors:

Niladri Pratap Maity, R.K. Thapa, S. Baishya

Keywords:

ATLAS, C-V, High-k, MOS

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] S. Rhee, C. Y. Kang, C. S. Kang, R. Choi, C. H. Choi, M. S. Akbar and J. C. Lee: Appl. Phys. Lett., Vol. 85 (2006), p.1286.

Google Scholar

[2] H-H. Hsu, Y. Chang and J. Lee: IEEE Electr. Device Lett., Vol. 28 (2007), p.964.

Google Scholar

[3] N. Sing, W. W. Fang, S. C. Rustagi, K. D. Budharaju, S. H. Teo, S. Mohanraj, G. Q. Lo, N. Balasubramanium and D. L. Kwong: IEEE Electr. Device Lett., Vol. 28 (2007), p.558.

DOI: 10.1109/led.2007.899330

Google Scholar

[4] D. C. Suh, Y. D. Cho, S. W. Kim, D-H. Ko, Y. Lee, M-H. Cho and J. Oh: Appl. Phys. Lett., Vol. 96 (2010), pp.142112-1.

Google Scholar

[5] R. G. Southwick, J. Reed, C. Buu, R. Butler, G. Bersuker and B. K. Knowlton: IEEE Trans. Device Mat Re., Vol. 10 (2010), p.201.

Google Scholar

[6] N. P. Maity, A. K. Pandeya and Reshmi Maity: Int. J. of Computer Science Issues, Vol. 9 (2012), p.297.

Google Scholar

[7] S. M. Sze and K. K. Ng: Physics of the Semiconductor Devices (Wiley Interscience, New Jersey, 2007).

Google Scholar

[8] B. G. Streetman and S. Banerjee: Solid State Electronic Devices (Prentice-Hall, New Jersey, 2001).

Google Scholar

[9] H. Hu, C. Zhu, X. Yu, A. Chin, M. F. Li, M. F. Li, B. J. Cho, D. L. Kwong, P. D. Foo, M. B. Yu, X. Liu and J. Wrinkler: IEEE Electron Device Lett., Vol. 24 (2003), p.60.

Google Scholar

[10] Y. Hou, M. Li, H. Yu and D. L. Kwong: IEEE Electron Device Lett., Vol. 24 (2003), p.96.

Google Scholar

[11] Y. Xuan, Y. Q. Wu, H. C. Lin,T. Shen and Peide D. Ye: IEEE Electron Device Lett., Vol. 28, (2007), p.935.

Google Scholar

[12] S.B. Chen, C. H. Lai, K.T. Chan, Albert Chin, J. C. Hsieh and J. Liu: IEEE Electron Device Lett., Vol. 23 (2002), p.203.

Google Scholar

[13] N. P. Maity, A. K. Pandeya, S. Chakraborty and M. Roy: J. Nano- Electron. Phys., Vol. 3 (2011), p.947.

Google Scholar