Simultaneous Optimization of Ge Doping Profile and Layout in Multi-Finger Power SiGe HBTs for High Thermal Stability

Abstract:

Considering the effect of electro-thermal feedback on the thermal stability of multi-finger power SiGe HBT, optimization of SiGe HBT on both Ge doping profile (electrical aspect) and layout (thermal aspect) is demonstrated in this paper. A novel stepped Ge doping profile of SiGe HBT with a grading Ge concentration in base region is proposed to improve the temperature coefficient of current gain, meanwhile, the cut-off frequency of HBT is also increased considerably due to the accelerated electric field caused by the Ge concentration grading. However, there is still an uneven temperature distribution. Therefore, the layout of multi-finger HBT with nun-uniform emitter finger length is optimized to compensate the thermal coupling effects and hence the uneven temperature distribution is improved obviously. It is shown that the device with simultaneous optimization of Ge doping profile and layout could be in thermal stability over a wide temperature range, which presents useful guideline to design microwave power HBTs.

• Periodical: Advanced Materials Research (Volumes 816-817)
• Pages: 80-83
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.816-817.80
• Online since: September 2013
• Authors: R.X. Hua, D.Y. Jin, W.R. Zhang, D. Lu, Q. Fu, X.F. Zhu
• Keywords: Ge Doping Profile, Non-Uniform Finger Length, SiGe HBT, Thermal Stability

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