The Properties of ITO/Arc-ZnO Passivating Layer for TCO Conducting Substrate Deposited by RF Magnetron Sputtering

Abstract:

Abstract. In this work, a thermally stable multilayered transparent conducting oxide (TCO) utilizing ZnO antireflective thin film (arc-ZnO) has been prepared by RF magnetron sputtering. The novel ITO/arc-ZnO conducting substrate with blocking layer capabilities has been designed using step-down interference coating structure based on double layer antireflection coating (DLAR). The XRD result revealed a mixed-oriented type of crystalline structure between ITO and ZnO with preferred [222] and [002] orientations, respectively. The antireflection behaviour of multilayer ITO/arc-ZnO is evidence with the presence of two maximum peaks overshoots at 440 nm and 750 nm range while eliminating approximately 92% reflectance, hence contributes to higher overall transmittance (≥ 87%) in the mid-wavelength region. The ITO/arc-ZnO blocking layers conserves the low resistivity of ITO at 5.71 x 10-4 Ω cm, even after oxidizing during air annealing process above 400 °C. These results demonstrate that the multilayered ITO/arc-ZnO with tailored refractive index substrate is a realistic approach for higher overall transmittance with good stability in electrical properties, prolonged with an added capability of suppressing back electron transfer that is foreseen suitable for dye sensitized solar cell application.

• Periodical: Advanced Materials Research (Volume 832)
• Pages: 579-584
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.832.579
• Online since: November 2013
• Authors: Mohd Hanapiah Abdullah, Lyly Nyl Ismail, Mohammad Rusop Mahmood
• Keywords: Antireflection Coating (ARC), Compact Layer, Encapsulated TiO₂, Indium Tin Oxide (ITO), RF Magnetron Sputtering

References

[1] S. M. Lee, Y. S. Lee, C. H. Shim, N. J. Choi, B. S. Joo, K. D. Song, J. S. Huh, D.D. Lee , Three electrodes gas sensor based on ITO thin film, Sens. Actuators B: Chem. 93 (2003) 31.

DOI: 10.1016/s0925-4005(03)00335-6

[2] S. Ishibashi, Y. Higuchi, Y. Ota, K. Nakamura, Low resistivity indium–tin oxide transparent conductive films. I. Effect of introducing H2O gas or H2 gas during direct current magnetron sputtering, J. Vac. Sci. Technol. A 8(1990) 1399.

DOI: 10.1016/0042-207x(91)90990-z

[3] K. L. Chopra, S. Major, D. K. Pandya, Transparent conductors—A status review, Thin Solid Films 102 (1983) 1.

DOI: 10.1016/0040-6090(83)90256-0

[4] J. J. Ho, C. Y. Chen, R. Y. Hsiao, O. L. Ho, The work function improvement on indium-tin-oxide epitaxial layers by doping treatment for organic light-emitting device applications, J. Phys. Chem. 111(2007) 8372.

DOI: 10.1021/jp0703408

[5] Y. Yang, L. Wang, H. Yan, S. Jin, T. J. Marks, S. Li, Highly transparent and conductive double-layer oxide thin films as anodes for organic light-emitting diodes, Appl. Phys. Lett. 89 (2006) 51116.

DOI: 10.1063/1.2240110

[6] T. Kawashima, T. Ezure, K. Okada, H. Matsui, K. Goto, N. Tanabe, FTO/ITO double-layered transparent conductive oxide for dye-sensitized solar cells, J. Photochem. Photobiol. A: Chem. 164 (2004) 199.

DOI: 10.1016/j.jphotochem.2003.12.028

[7] J. H. Noh, H. S. Han, S. Lee, D. H. Kim, J. H. Park et. al., Nb-Doped TiO2: A New Compact Layer Material for TiO2 Dye-Sensitized Solar Cells, J. Phys. Chem. C 114 (2010) 13867–13871

[8] S.Lee, J.H. Noh, H.S. Han, D.K. Yim, D. H. Kim, J.K. Lee, J. Y. Kim, H.S. Jung, K.S. Hong, Nb-Doped TiO2: A New Compact Layer Material for TiO2 Dye-Sensitized Solar Cells. J.Phys.Chem.C113 (2009) 6878–6882.

DOI: 10.1021/jp9002017

[9] J. H. Noh, S. Lee, J. Y. Kim, J.-K. Lee, H. S. Han, C. M. Cho, I. S. Cho, H. S. Jung, and K. S. Hong, Functional multilayered transparent conducting oxide thin films for photovoltaic devices, The Journal of Physical Chemistry C, vol. 113, pp.1083-1087, 2008.

DOI: 10.1021/jp808279j

[10] R.B. Pettit, C.J. Brinker, C.S. Ashley, Sol-gel double-layer antireflection coatings for silicon solar cells, Solar Cells 15 (1985) 267–278.

DOI: 10.1016/0379-6787(85)90083-3

[11] M.J. Chuang, H.F. Huang, C.H. Wen, A.K. Chu, On the structure and surface chemical composition of indium-tin oxide films prepared by long-throw magnetron sputtering, Thin Solid Films 518 (2010) 2290–2294.

DOI: 10.1016/j.tsf.2008.10.146

[12] R.V. Joshi, S. Brodsky, Collimated sputtering of TiN/Ti liners into sub‐half‐micrometer high aspect ratio contacts/lines, Applied Physics Letters 61 (1992) 2613–2615.

DOI: 10.1063/1.108116

[13] M. Kamei, H. Enomoto, I. Yasui, Origin of the crystalline orientation dependence of the electrical properties in tin-doped indium oxide films, Thin Solid Films 392 (2001) 265.

DOI: 10.1016/s0040-6090(01)01041-0

[14] G. Frank, H. Kostlin, Electrical properties and defect model of tin-doped indium oxide layers Appl. Phys. A 27 (1982) 197.

DOI: 10.1007/bf00619080

[15] J. van de Lagemaat, N.-G. Park, A.J. Frank, Influence of Electrical Potential Distribution, Charge Transport, and Recombination on the Photopotential and Photocurrent Conversion Efficiency of Dye-Sensitized Nanocrystalline TiO2 Solar Cells:  A Study by Electrical Impedance and Optical Modulation Techniques, J. Phys. Chem. B 104 (2000) 2044.

DOI: 10.1021/jp993172v

[16] C. Longo, A.F. Nogueira, M.-A. De Paoli, H. Cachet, Solid-state and flexible dye-sensitized TiO2 solar cells: a study by electrochemical impedance spectroscopy, J. Phys. Chem. B 106 (2002) 5925.

DOI: 10.1021/jp014456u

[17] B.S. Richards, S.F. Rowlands, C.B. Honsberg and J.E. Cotter, TiO2 DLAR coatings for planar silicon solar cells, Res. Appl. 11 (2003) 27-32.

DOI: 10.1002/pip.474

[18] M.A. Green, Silicon Solar Cells: Adv. Principles and Practice, Bridge Printery, Sydney, Australia, 1995.

[19] D. Mergel, Z. Qiao, Correlation of lattice distortion with optical and electrical properties of InO: Sn films, J. Appl. Phys. 95 (2004) 5608.

DOI: 10.1063/1.1704852

[20] Gonza`lez, G. B. Mason, T. O. Quintana, J. P. Warschkow, O. Ellis, D. E. Hwang, J.-H. Hodges, J. P. Jorgensen, J. D. Defect structure studies of bulk and nano-indium-tin oxide, J. Appl. Phys. 96 (2004) 3912.

DOI: 10.1063/1.1783610