Effect of Urea as a Stabiliser in the Thermal Immersion Method to Synthesise Zinc Oxide Nanostructures on Porous Silicon Nanostructures

Abstract:

In this work, ZnO nanostructures were prepared using the catalytic immersion method (90 °C) with zinc nitrate hexahydrate (Zn (NO₃)₂6H₂O) as a precursor, urea (CH₄N₂O) as a stabiliser and porous silicon nanostructures (PSi) as a substrate. PSi prepared on p-type Si by using electrochemical etching method. Different molarity concentration ratios of Zn (NO₃)₂6H₂O to CH₄N₂O (2:1, 1:2, 1:4 and 1:6) were used in this work. The effects of the urea concentration during the synthesis process were discussed. The ZnO nanostructures were characterised using field emission scanning electron microscope (FESEM), photoluminescence (PL) and I-V probe. Porous nanoflakes were successfully synthesised on a p-type PSi substrate that was prepared by electrochemical etching. High-intensity photoluminescence (PL) at the optimum concentration indicated that urea is a good stabiliser to produce ZnO nanostructures with good crystallinity. The high resistance of ZnO/PSi show that electrical properties of PSi dominant compare to ZnO nanostructures.

• Periodical: Advanced Materials Research (Volume 832)
• Pages: 644-648
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.832.644
• Online since: November 2013
• Authors: Mohd Husairi Fadzilah Suhaimi, Kevin Alvin Eswar, Azlinda Ab Aziz, Mohamad Rusop, Saifollah Abdullah
• Keywords: I-V Characteristics, Porous Silicon Nanostructures, Urea, ZnO Nanostructures

References

[1] Minegishi K., Koiwai Y., Kikuchi Y., Yano K., Kasuga M., and Shimizu A.: 1997, Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition, Japanese Journal of Applied Physics, 36, L1453-L1455

DOI: 10.1143/jjap.36.l1453

[2] wu G.S., Xie T., Yuan X.Y., Li Y., Yang L., Xiao Y.H., and Zhang L.D.: 2005, Controlled synthesis of ZnO nanowires or nanotubes via sol–gel template process, Solid State Communications, 134, (7), 485-489

DOI: 10.1016/j.ssc.2005.02.015

[3] Z.Marinho J., Romeiro F.C., Lemos S.C.S., V.Motta F., Riccardi C.S., Li M.S., Longo E., and Lima R.C.: 2012, Urea-Based Synthesis of Zinc Oxide Nanostructures at Low Temperature, Journal of Nanomaterials, 2012, 7

DOI: 10.1155/2012/427172

[4] Gaikwad R.S., Mane R.S., Pawar B.N., Ambade R.B., Ahn H.J., Han S.-H., and Joo O.-S.: 2012, Nitrogen-doped ZnO shells: Studies on optical transparency and electrical conductivity, Materials Research Bulletin, 47, (5), 1246-1250

DOI: 10.1016/j.materresbull.2012.01.024

[5] Bhattacharyya P., Basu P.K., Mukherjee N., Mondal A., Saha H., and Basu S.: 2007, Deposition of nanocrystalline ZnO thin films on p-Si by novel galvanic method and application of the heterojunction as methane sensor, J Mater Sci: Mater Electron, 18, (8), 823-829

DOI: 10.1007/s10854-006-9105-4

[6] Bacaksiz E., Yılmaz S., Parlak M., Varilci A., and Altunbaş M.: 2009, Effects of annealing temperature on the structural and optical properties of ZnO hexagonal pyramids, Journal of Alloys and Compounds, 478, (1–2), 367-370

DOI: 10.1016/j.jallcom.2008.11.025

[7] Sagar P., Kumar M., and Mehra R.M.: 2005, Influence of hydrogen incorporation in sol-gel derived aluminum doped ZnO thin films, Thin Solid Films, 489, (1–2), 94-98

DOI: 10.1016/j.tsf.2005.05.009

[8] Shinde V.R., Gujar T.P., Lokhande C.D., Mane R.S., and Han S.-H.: 2006, Mn doped and undoped ZnO films: A comparative structural, optical and electrical properties study, Materials Chemistry and Physics, 96, (2–3), 326-330

DOI: 10.1016/j.matchemphys.2005.07.045

[9] Wang C., Ji Z., Xi J., Du J., and Ye Z.: 2006, Fabrication and characteristics of the low-resistive p-type ZnO thin films by DC reactive magnetron sputtering, Materials Letters, 60, (7), 912-914

DOI: 10.1016/j.matlet.2005.10.057

[10] Kobayashi A., Sankey O.F., and Dow J.D.: 1983, Deep energy levels of defects in the wurtzite semiconductors AIN, CdS, CdSe, ZnS, and ZnO, Physical Review B, 28, (2), 946-956

DOI: 10.1103/physrevb.28.946

[11] Limpijumnong S., Li X., Wei S.-H., and Zhang S.B.: 2005, Substitutional diatomic molecules NO, NC, CO, N2, and O2: Their vibrational frequencies and effects on p doping of ZnO, Appl. Phys. Lett. 86, , 86, (211910), 3 pages

DOI: 10.1063/1.1931823