Effect of Post Annealing Temperature on Surface Morphology and Photoluminescence Properties of ZnO Thin Film

Abstract:

Zinc acetate as starting material along with diethanolamine as a stabilizer and isopropyl as a solvent were used in ZnO precursor preparation while p-type silicon was used as a substrate in this work. ZnO thin films were deposited on silicon wafer by spin coating deposition method. Samples were annealed at different temperature in range 500°C to 800°C. In other to study the surface morphology of thin film, Field Emission Scanning Microscopic (FESEM) was employed for every sample. It was found that, the thin films are composed by ZnO nanoparticles with size of about 18.3 nm to 32.95 nm. Topology of ZnO thin films was characterized by atomic force microscopy (AFM). In other to study the photoluminescence properties, 325 nm of xenon lamp was used as sources within range of 350 nm and 600 nm. It is found that two peaks are appears for the entire sample with the high intensity peak at 373 nm originated from the contribution of near band edge recombination from ZnO and low intensity at 573 nm was corresponding to ZnO defects.

• Periodical: Advanced Materials Research (Volume 832)
• Pages: 654-658
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.832.654
• Online since: November 2013
• Authors: Kevin Alvin Eswar, Mohd Husairi Fadzilah Suhaimi, Azlinda Ab Aziz, M. Rusop, Saifollah Abdullah
• Keywords: Photoluminescence Spectra, Sol-Gel Spin-Coating, Surface Morphology, Xenon Lamp, ZnO Nanoparticle

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