Toward the High-Quality Graphene for Optoelectronic Applications by Optimization of the Growth and Transfer Parameters

Lang Wang; Jian Hua Zhang; Lian Qiao Yang

doi:10.4028/www.scientific.net/AMR.834-836.33

Paper Titles

Study on Cerium Doped Flower-Like ZnO Microcrystaline Preparation and its Microwave Absorbing Properties
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The Research of Nano-Mechanical Properties of Mono-Crystalline Silicon
p.18

Friction and Wear Property of Ti(C,N)/ZrO₂/WC Nano-Composite Cermet Die Material
p.23

Fabrication and Characterization of Superhydrophobic Film on Titanium Substrate
p.29

Toward the High-Quality Graphene for Optoelectronic Applications by Optimization of the Growth and Transfer Parameters
p.33

Synthesis of β-Phase GeO₂ Nanoparticles and their High Pressure Studies
p.37

Preparation of Superhydrophobic Surface on Copper Foils by a Facile Method
p.42

Self-Assembled Alcohol Sensor of In₂O₃Nanorods
p.46

Preparation and Magnetic Properties of FeSi/SiO₂ Nanocomposites with Core-Shell Structure
p.50

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Toward the High-Quality Graphene for Optoelectronic Applications by Optimization of the Growth and Transfer Parameters

Abstract:

In this paper, the process parameters of graphene during fabrication and transfer are investigated. Cu is utilized as the substrate and chemical vapor deposition are used to obtain graphene. The results show that, the surface condition of the Cu substrate tends to be worse than as-received after a relatively higher temperature (1035°C) annealing and growth process, which lead to bad graphene quality. In addition, pre-treatment of Cu substrate by acetic acid is helpful to reduce the nucleation sites. Reflow process before PMMA etching is an effective method to eliminate the wrinkles formed during transfer. High-quality graphene for optoelectronic applications were obtained based on the optimized fabrication and transfer process.