Liquid Phase Epitaxy of Si-Doped AIN at 1300 °C in Ga-Al Melt

Asep Ridwan Setiawan; Masayoshi Adachi; Hiroyuki Fukuyama

doi:10.4028/www.scientific.net/AMR.845.3

Paper Titles

Liquid Phase Epitaxy of Si-Doped AIN at 1300 °C in Ga-Al Melt
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 845Liquid Phase Epitaxy of Si-Doped AIN at 1300 °C in...

Liquid Phase Epitaxy of Si-Doped AIN at 1300 °C in Ga-Al Melt

Abstract:

In the present study, we have successfully grown Si-doped AlN developed by solution growth technique using Ga-Al melt as a solvent under nitrogen atmosphere at 1300 °C. Si doping was introduced to the Ga-Al melt by adding pure Si metal. To allow homoepitaxial growth during solution growth experiment, sapphire substrate were nitrided with precise control to produce hiqh quality single crystalline AlN films with low dislocation density. With the help of AlN film template from above methods, we have successfully grown Si-doped AlN single crystalline layer with a flat surface and almost free from cracks. The full width at half maximum (FWHM) of x-ray rocking curve values for (0002) and (10-12) diffraction from the Si-doped AlN film were 43,2 and 594 arcsec, respectively.