Electro Synthesized MoTe2 Thin Films and their Semiconductor Studies towards Photoelectrochemical Cell

T. Joseph Sahaya Anand; Nor Hamizah Mazlan

doi:10.4028/www.scientific.net/AMR.845.392

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 845Electro Synthesized MoTe2 Thin Films and their...

Electro Synthesized MoTe₂ Thin Films and their Semiconductor Studies towards Photoelectrochemical Cell

Abstract:

Transition metal chalcogenide molybdenum ditelluride (MoTe₂) thin films have been electrosynthesized cathodically on indium tin oxide-coated (ITO) conducting glass substrates from ammonaical solution of H₂MoO₄ and TeO₂. The electrode potential was varied while the bath temperature was maintained at 40±1 oC and deposition time of 30 minutes. Highly textured MoTe₂ films with polycrystalline nature are observed by X-ray diffraction analysis. Compositional analysis by EDX gives their stoichiometric relationships. Scanning electron microscope (SEM) was used to study surface morphology and shows that the films are smooth, uniform and useful for device fabrication. The optical absorption spectra showed that the material has an indirect band-gap value of 1.91-2.04 eV with different electrode potential. Besides, the film exhibited p-type semiconductor behavior. Keywords: Molybdenum ditelluride; Thin films; Electrodepositon; Solar cell;

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Advanced Materials Research (Volume 845)

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392-397

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https://doi.org/10.4028/www.scientific.net/AMR.845.392

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December 2013

Authors:

T. Joseph Sahaya Anand*, Nor Hamizah Mazlan

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Electrodepositon, Molybdenum Ditelluride, Solar Cell, Thin Film

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References

[1] L.M. Peter and R.L. Wang, Channel flow cell elctrodeposition of CdTe for solar cells. Electrochemistry Communications, 1999. 1: pp.554-558.

DOI: 10.1016/s1388-2481(99)00116-2

Google Scholar

[2] T. Joseph Sahaya Anand, Synthesis and characterization of MoS2 films for PEC cells. Sains Malaysiana, 2009. 38: pp.85-89.

Google Scholar

[3] Z. Zainal, N. Saravanan and H.L. Mien, Electrodeposition of nickel selenide thin films in the presence of triethanolamine as a complexing agent. Materials Science: Materials In Electronics, 2005. 16: pp.111-117.

DOI: 10.1007/s10854-005-6460-5

Google Scholar

[4] J.C. Berne`de, C.A., L. Assmann and M. Spiesser, X-ray photoelectron spectroscopy study of MoTe2 single crystals and thin films. Applied Surface Science 2003. 219: pp.238-248.

DOI: 10.1016/s0169-4332(03)00697-4

Google Scholar

[5] A. Conan, A.B., A. Amrouche and M. Spiesser, Semiconducting properties and band structure of MoTe2 single crystals. J. Physic, 1984. 45: pp.459-465.

DOI: 10.1051/jphys:01984004503045900

Google Scholar

[6] M. Kettaf, A.C., A. Bonnet and J. C. Bernede, Electrical Properties Of Molybdenum DitellurideI Thin Films. Physical Chemical Solids, 1990. 51(4): pp.333-341.

DOI: 10.1016/0022-3697(90)90116-w

Google Scholar

[7] T. Joseph Sahaya Anand, and S. Shariza, A Study on Molybdenum Sulphoselenide (MoSxSe2-x, 0 ≤ x ≤ 2) Thin Films: Growth from Solution and its Properties Electrochimica Acta, 2012. 81: pp.64-73.

DOI: 10.1016/j.electacta.2012.07.077

Google Scholar

[8] Joint Committee of Powder Diffraction Standards (JCPDS), File No. 01-071-0117.

Google Scholar

[9] N.L. Heda, A.D., Ambica Marwal, Yamini Sharma, S. K. Srivastava, Gulzar Ahmed, Rajesh Jain, B. L. Ahuja, Journal of Physics and Chemistry of Solids, 2010. 71: pp.187-193.

DOI: 10.1016/j.jpcs.2009.11.002

Google Scholar

[10] Joint Committee of Powder Diffraction Standards (JCPDS), File No. 00-033-0397.

Google Scholar

[11] S. K. Srivastava, N.G. and J.C. Bernede, Growth of textured nonstoichiometric MoTe2 films from Mo/Te layers and their use as precursor in the synthesis of MoTe2-xSx films. Solid State Communications 2004. 132: pp.601-606.

DOI: 10.1016/j.ssc.2004.09.004

Google Scholar

[12] T. J. S. Anand, S. Shariza, Z.M. Rosli, A. Shaaban, Sivarao, M.R. Said, K. Jusoff, S. Thiru, Optical and Mott-Schottky studies of ternary MoSSe thin films synthesized by electrochemical route. World Applied Sciences Journal 2013. 21: pp.60-67.

Google Scholar