[1]
I.R. Shein, V.L. Kozhevnikov, A.L. Ivanovskii, Solid State Sci. 10 (2008) 217.
Google Scholar
[2]
K.Y. Hong, S.H. Kim, Y.J. Heo, Y.U. Kwon, Solid State Commun. 123 (2002) 305.
Google Scholar
[3]
C.M.I. Okoye, J. Phys.: Condens. Matter 15 (2003) 5945.
Google Scholar
[4]
V. E. Henrich and P. A. Cox, The Surface Science of Metal Oxides Cambridge University Press, Cambridge, (1994).
Google Scholar
[5]
A. L. Linsebigler and J. T. Yates, Chem. Rev. Washington, D.C. 95, 735 (1995).
Google Scholar
[6]
V. Ravikumar, D. Wolf, and V. P. Dravid, Phys. Rev. Lett. 74, 960 (1995).
Google Scholar
[7]
Fujimori A, Hase I, Nakamura M, et al. Doping induced changes in the electronic structure of LaxSi1-xTiO3 : limitation of the one electron rigid band model and the Hubbard model . Phys Rev B, 1992, 46( 15) : 9841.
Google Scholar
[8]
Higuchi T , Tsukamoto T, Kobayashi K, et al . Electronic structure in the band gap of lightly doped SrTiO3 by high resolution X ray absorption spectroscopy. Phys Rev B, 2000, 61 ( 19) : 12860.
DOI: 10.1103/physrevb.61.12860
Google Scholar
[9]
Evarestov R A, Pi skunov S, Kotomin E A, et al. Single impurity in insulator: ab initio study of Fe doped SrT iO3. Phys RevB, 2003, 67: 064101 1.
Google Scholar
[10]
Luo W D, Duan W H , Steven G L, et al. Structural and electronic properties of n doped and p doped SrT iO3. Phys Rev B, 2004, 70: 214109 1.
Google Scholar
[11]
Tomio T, Miki H, Tabata H, et al. Control of electrical conductivity in laser deposited SrTiO3 thin films with Nb dopin g. J Appl Phys, 1994, 76: 5886.
DOI: 10.1063/1.358404
Google Scholar
[12]
Saha S. Sinha T P and Mookerjee A Phys. Rev. B [J]2000 62 8828.
Google Scholar