High-Performance Indium Oxide Thin Film Transistor with ITO Source/Drain Electrodes Fabricated by Reactive Sputtering

Xin An Zhang; Xian Kun Yu; Jun Xia Zhai; Yang Jiao; Ling Hong Ding; Wei Feng Zhang

doi:10.4028/www.scientific.net/AMR.852.319

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High-Performance Indium Oxide Thin Film Transistor with ITO Source/Drain Electrodes Fabricated by Reactive Sputtering

Abstract:

We report on the fabrication of bottom gate thin film transistors with indium oxide (In2O3) thin films as the active channel layers. The films were deposited on SiO2/Si substrate at room temperature by direct current (DC) magnetron sputtering. The ITO films were used as source and drain electrodes. The In2O3 films were structurally characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. The results revealed that the films were amorphous in nature. Electrical measurement has revealed that the devices operate as an n-channel enhancement mode and exhibit an on/off ratio of 10⁶. The threshold voltage is-3V and the channel mobility on the order of 22.3 cm2/Vs has been determined.