Temperature Dependent Current-Voltage Characteristics of n-Type Nanocrystalline-FeSi₂/p-Type Si Heterojunctions Fabricated by Pulsed Laser Deposition

Abstract:

n-Type NC-FeSi₂/p-type Si heterojunctions were successfully fabricated by PLD, and their forward current-voltage characteristics were analyzed on the basis of thermionic emission theory (TE) in the temperature range from 300 down to 77 K. With a decrease in the temperature, the ideality factor was increased while the zero-bias barrier height was decreased. The calculated values of ideality factor and barrier height were 3.07 and 0.63 eV at 300 K and 10.75 and 0.23 eV at 77 K. The large value of ideality factor indicated that a tunneling process contributes to the carrier transport mechanisms in the NC-FeSi₂ films. The series resistance, which was estimated by Cheungs method, was strongly dependent on temperature. At 300 K, the value of series resistance was 12.44 Ω and it was dramatically enhanced to be 1.71× 10⁵ Ω at 77 K.

• Periodical: Advanced Materials Research (Volume 858)
• Pages: 171-176
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.858.171
• Online since: November 2013
• Authors: Nathaporn Promros*, Ryūhei Iwasaki, Suguru Funasaki, Kyohei Yamashita, Chen Li, Tomohiro Yoshitake
• Keywords: Heterojunction, I-V Characteristics, Nanocrystalline FeSi₂, PLD

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