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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 873Growth of β-Ga2O3 Nanoparticles Doped with Tin by...

Growth of β-Ga₂O₃ Nanoparticles Doped with Tin by Ni²⁺ Catalyzed Chemical Vapor Deposition

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Abstract:

Sn-doped monoclinic β-Ga₂O₃ nanoparticles were successfully fabricated on Si (111) substrates with NiCl₂as a catalyst by chemical vapor deposition using metallic gallium and oxygen as sources. The composition, crystal structure, morphology, and optical properties were characterized by X-ray diffraction, scanning electron microscopy, Fourier-transform infrared spectrophotometry (FTIR), and photoluminescence, respectively. The results demonstrate that the sample was monoclinic β-Ga₂O₃ nanoparticles with diameters approximately ranging from 200~300 nm. Well-defined prominent absorption bands located at 458 and 671 cm^-1 in the FTIR spectra corresponded to Ga-O vibrations. The photoluminescence spectrum shows that the Ga₂O₃ nanoparticles have a broad and strong emission band ranging from 300 nm to 650 nm with four Gaussian bands centered at approximately 346 (UV), 416 (blue), 473 (dark blue), and 529 nm (green), which may be attributed to defects such as oxygen vacancies and galliumoxygen vacancy pairs. The growth mechanism of β-Ga₂O₃nanoparticles is discussed in brief.

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The Eighth China National Conference on Functional Materials and Applications

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Advanced Materials Research (Volume 873)

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200-205

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.873.200

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Online since:

December 2013

Authors:

Feng Shi*, Yu Fen Gu, Cui Xia Li

Keywords:

Chemical Vapor Deposition (CVD), Gallium Oxide, Nanoparticle, Photoluminescence (PL), Sn-Doping

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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