NMOS Low Boron Activation in Pre-Amorphise Silicon

Muzalifah Mohd Said; Zul Atfyi Fauzan; Nur Fatihah Azmi

doi:10.4028/www.scientific.net/AMR.875-877.734

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 875-877NMOS Low Boron Activation in Pre-Amorphise Silicon

NMOS Low Boron Activation in Pre-Amorphise Silicon

Abstract:

The high demand of smaller and compact size of MOSFETs has leads to desirable for ultra shallow junction formation with low sheet resistance and good electrical performances. These two characteristics are required to suppress short channel effects and to increase the efficiency of device. In this paper, Pre-amorphise implantation (PAI) PMOS with different doses of Boron and the basic PMOS structure are done by using ATHENA and the performance of devices is compared by using ATLAS software package from Silvaco TCAD. Comparison done in electrical characteristic, I-V curve Ion and Ioff has showed PMOS with PAI technology with low boron doses resulted in increasing electrical performance characteristic.

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Periodical:

Advanced Materials Research (Volumes 875-877)

Pages:

734-738

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.875-877.734

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Online since:

February 2014

Authors:

Muzalifah Mohd Said, Zul Atfyi Fauzan, Nur Fatihah Azmi

Keywords:

Electrical Characterization, Low Boron Activation, Pre-Amorphise Implantation (PAI) Silicon, Ultra Shallow Junction

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