Carrier Hopping and Relaxation in InAs/GaAs Quantum Dot Heterostructures

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Abstract:

We investigate the effect of carrier dynamics on the temperature dependence of photoluminescence spectra from InAs/GaAs quantum dot heterostructures with different dot size uniformity. Intersublevel relaxation lifetimes and carrier transferring mechanisms are simulated using a model based on carriers relaxing and thermal emission of each discrete energy level in the quantum dot system. Calculated relaxation lifetimes are decreasing with temperature and have larger values for sample with lower dot size uniformity. In the quantitative discussion of carrier dynamics, the influence of thermal redistribution on carriers relaxing process of quantum dot system is demonstrated by our model.

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Advanced Materials Research (Volumes 875-877)

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9-13

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February 2014

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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