Radiation Model of Light Emitting Diode Based on Algainp Heterostructures with Multiple Quantum Wells

Alexandr Vasilievich Gradoboev; Ksenia Nikolaevna Orlova

doi:10.4028/www.scientific.net/AMR.880.237

Paper Titles

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Photoinduced Bactericidal Activity of Titanium Dioxide Nanoparticles Attached to the Surface of Polypropylene Fibers
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Plasma Technology of Silicate Melts Obtaining in Mineral Fibers Production
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Radiation Model of Light Emitting Diode Based on Algainp Heterostructures with Multiple Quantum Wells
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Simulating the Formation of Composite Surface Structure during Electron Beam Treatment
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 880Radiation Model of Light Emitting Diode Based on...

Radiation Model of Light Emitting Diode Based on Algainp Heterostructures with Multiple Quantum Wells

Abstract:

The presented radiation model allows evaluating the contribution of ohmic contacts metal-semiconductor into LED radiation resistance and, thus, can be used when developing the design and the production technology of LED with required radiation resistance.

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Periodical:

Advanced Materials Research (Volume 880)

Pages:

237-241

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.880.237

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Online since:

January 2014

Authors:

Alexandr Vasilievich Gradoboev*, Ksenia Nikolaevna Orlova

Keywords:

Algainp, Heterostructures, Light Emitting Diode (LED), Radiation Resistance

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References

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