Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

Xiang Min Zhao

doi:10.4028/www.scientific.net/AMR.881-883.1117

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 881-883Effects of the Sputtering Time of AlN Buffer Layer...

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

Abstract:

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

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Periodical:

Advanced Materials Research (Volumes 881-883)

Pages:

1117-1121

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.881-883.1117

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Online since:

January 2014

Authors:

Xiang Min Zhao*

Keywords:

Bueffer Layer, Radio Frequency Magnetron Sputtering, Zinc Oxide Films

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