Influence of Temperature on the Preparation of GaN Nanowires

Xin Zhong Wang; Cheng Guo Wu; Shi Guo Li

doi:10.4028/www.scientific.net/AMR.887-888.121

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 887-888Influence of Temperature on the Preparation of GaN...

Influence of Temperature on the Preparation of GaN Nanowires

Abstract:

As one-dimensional GaN material has excellent physical properties, it owns a huge prospect in the field of optoelectronic devices, and nanowire is currently one of the hotspots, at home and abroad, which had already invested a considerable force into the GaN nanowires. This paper studied the growth method based on Gas Liquid Solid (VLS) mechanism using Ni as catalyst in a chemical vapor deposition (CVD) system. By scanning electron microscopy (SEM), energy dispersive X-ray fluorescence (EDX) spectroscopy, transmission electron microscopy (TEM) test, we focused on the influence of temperature and pretreat on the morphology and properties of GaN nanowires. At the same time, we explored the law and gave an appropriate explanation.

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Advanced Materials Research (Volumes 887-888)

Pages:

121-125

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.887-888.121

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Online since:

February 2014

Authors:

Xin Zhong Wang, Cheng Guo Wu, Shi Guo Li

Keywords:

GaN, Nanowire, Ni, VLS

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