Control of the Texture Structure Size in Anisotropic Etching of Silicon

Abstract:

Reflection losses of light at the silicon surface cause a reduction in conversion efficiency of silicon solar cell. There is anisotropic etching silicon to form a textured structure on the silicon surface by a simple wet process as a method of reducing the reflectivity. Further, miniaturization of the textured structure to the nanosize will improve the conversion efficiency by reducing the reflectivity. In this study, we formed texture structure of 1 μm size by applying the particles on a silicon surface as an etching mask.

• Periodical: Advanced Materials Research (Volume 893)
• Pages: 174-177
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.893.174
• Online since: February 2014
• Authors: Junki Komori*, Tsuyoshi Sueto, Kensuke Nishioka
• Keywords: Ag Nanoparticle, Anisotropic Etching Silicon, Etching Mask, Subwavelength Structure

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