Mechanism of Memristor with TiO2-x/TiO2/TiO2+x Nano Thin Three Layers

Xiao Hui Bai; Lin Lin Li; Chun Ping Ai

doi:10.4028/www.scientific.net/AMR.893.178

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 893Mechanism of Memristor with TiO2-x/TiO2/TiO2+x...

Mechanism of Memristor with TiO_2-x/TiO₂/TiO_2+x Nano Thin Three Layers

Abstract:

The paper is concerned on the properties of the new ideal circuit element, a memristor. We proposed memristor with nanothin three layers of Pt/ TiO_2-x/TiO₂/TiO_2+x/Pt sandwiched structure in this paper,based on study of the working principles of HP memristor. As the new TiO_2+x layer and its expansion effect,the switching speed of the new structure memristor mentioned would be faster. The paper gives the test result and mechanism of the new structure memristor, such as characteristic analysis results of Pt nanowire, memristor, repetitiveness and V-I characteristic hysteretic curve of three layers memristor by using semiconductor tester.

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Advanced Materials Research (Volume 893)

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178-181

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https://doi.org/10.4028/www.scientific.net/AMR.893.178

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Online since:

February 2014

Authors:

Xiao Hui Bai*, Lin Lin Li, Chun Ping Ai

Keywords:

Energy Band, Memristor, Nano, Thin Three Layers, TiO_2+X

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