Optimized Responsivity of Size-Tailored SbBiSe3 Nanowire Photodetectors

Rong Huang; Jie Zhang; Fen Fen Wei; Tao Kong; Guo Sheng Cheng

doi:10.4028/www.scientific.net/AMR.893.182

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 893Optimized Responsivity of Size-Tailored SbBiSe3...

Optimized Responsivity of Size-Tailored SbBiSe₃ Nanowire Photodetectors

Abstract:

Single-crystalline Sb₂Se₃ and SbBiSe₃ nanowires (NWs) were synthesized by chemical vapor deposition. The SbBiSe₃NW photodetectors defined by a photolithography microfabrication approach exhibited an enhanced electrical transport and improved spectra responsivity compared with Sb₂Se₃ NW photodetectors. Moreover, the size of synthesized NWs was tailored to optimize the photoelectric performances. Results indicated that the responsivity increased with the thicker or shorter NWs, which were further revalidated by theoretical calculations.

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Advanced Materials and Engineering Materials III

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Periodical:

Advanced Materials Research (Volume 893)

Pages:

182-185

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.893.182

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Online since:

February 2014

Authors:

Rong Huang, Jie Zhang, Fen Fen Wei, Tao Kong, Guo Sheng Cheng*

Keywords:

Enhanced Responsivity, NW Size Effect, Photodetector, SbBiSe₃ NWs

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