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Dielectric Properties of Mg-Doped CaCu3Ti4O12 Measured at High Frequencies
Abstract:
Mg-doped CaCu3Ti4O12 (CCTO) systems were prepared by solid state reaction using raw materials of CaCO3, CuO, TiO2 and MgO. The samples were calcined at 900°C for 12 hours and sintered at 1030°C for 10 hours. Single phase CCTO formed after sintering process. It was found that dielectric constant and dielectric loss of CCTO improved by MgO dopant.
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190-193
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Online since:
February 2014
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© 2014 Trans Tech Publications Ltd. All Rights Reserved
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