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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 895Properties of Pt Schottky Contact on Porous...

Properties of Pt Schottky Contact on Porous In_0.27Ga_0.73N Thin Film Revealed from I-V Measurements

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Abstract:

The electrical properties of a Pt Schottky contact on porous In_0.27Ga_0.73N/GaN/AlN/Si (111) thin film that was grown via the plasma-assisted molecular beam epitaxy technique were reported. Porous film nanostructure was synthesized using the electrochemical etching technique at a current density of 25 mA/cm². The formed pores were dissimilar in terms of size and shape. The effects of annealing temperature and applied bias on Schottky contact for porous sample were investigated by current-voltage (IV) measurements in ambient illumination. The barrier height and ideality factor were determined. The Pt Schottky contact exhibits thermal stability during annealing. Schottky barrier height increased when each of the annealing temperature and bias voltage were increased.

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Solid State Science and Technology IV

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Periodical:

Advanced Materials Research (Volume 895)

Pages:

558-563

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.895.558

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Online since:

February 2014

Authors:

Saleh H. Abud, Zainuriah Hassan, F.K. Yam, Mohd Anas Ahmad

Keywords:

I−V, Pa-MBE, Porous InGaN

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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