High Temperature Storage and Gamma Radiation Effects on Mechanical Properties of Stacked Die Package

Azman Jalar; Wan Yusmawati Wan Yusoff; Norinsan Kamil Othman; Irman Abdul Rahman

doi:10.4028/www.scientific.net/AMR.895.567

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 895High Temperature Storage and Gamma Radiation...

High Temperature Storage and Gamma Radiation Effects on Mechanical Properties of Stacked Die Package

Abstract:

Effect of gamma radiation (1.33 MeV) and high temperature storage of semiconductor package towards micromechanical properties has been investigated. The in-house fabricated Quad Flat No Lead was exposed to gamma radiation with the dose of 5 Gy. Afterwards, high temperature storage was performed at 150 °C for 10, 100 and 1000 hours. Subsequently, the three point bending technique was carried out to obtain the micromechanical properties of semiconductor package. The fracture of the packages caused by three point bending test was subjected to 3D CT scan to capture the image of the fracture. Irradiated package shows the decreasing in their strength with increasing doses of gamma radiation. However, the strength of the package was improved after high temperature storage for 10 hours and decreased as the storage period is extended. Further analysis exhibited that high temperature storage for 10 hours is reveal as good thermal treatment for package in radioactive environment application.

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Periodical:

Advanced Materials Research (Volume 895)

Pages:

567-570

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.895.567

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Online since:

February 2014

Authors:

Azman Jalar*, Wan Yusmawati Wan Yusoff, Norinsan Kamil Othman, Irman Abdul Rahman

Keywords:

Gamma Radiation, High Temperature Storage, Semiconductor Package, Three Point Bending Technique

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