[1]
C. de Falco, M. Porro, R. Sacco, Verri, Maurizio, Multiscale modeling and simulation of organic solar cells,. Comp. Meth. in Appl. Mech. and Eng. 245-246 (2012) 102-116.
DOI: 10.1016/j.cma.2012.06.018
Google Scholar
[2]
B. Lee, Electron Tunneling Time through a Heterostructure Potential Barrier Superlat. and Microstruct. 14 (1993) 295.
Google Scholar
[3]
T.M. Abdolkader, H.H. Hassan, W. Fikry, O.A. Omar, Solution of Schrödinger in Double-Gate MOSFETs using Transfer Matrix Method, Electronics Letters 40 (2004) 20.
DOI: 10.1049/el:20045595
Google Scholar
[4]
L. Hasanah, M. Abdullah, Sukirno, T. Winata, Kharurrijal, Model of a tunneling current in an anisotropic Si/Si1−xGex/Si heterostructure with a nanometer thick barrier including the effect of parallel–perpendicular kinetic energy coupling, Semicond. Sci. Technol, 23 (2008).
DOI: 10.1088/0268-1242/23/12/125024
Google Scholar
[5]
B. Mulyanti, L. Hasanah, Khairurrijal, The Electrical Characteristics Model of GaN/InGaN/GaN Heterostructure in InGaN-based LED, Appl. Phys. Research 4 (2012) 98-104.
DOI: 10.5539/apr.v4n2p98
Google Scholar
[6]
Khairurrijal, S. Miyazaki, M. Hirose, Electron Field Emission from a Silicon Subsurface Based on a Generalized Airy Function Approach, S J. Vac. Sci. Technol. B 17 (1999) 306.
DOI: 10.1116/1.590555
Google Scholar
[7]
A. Rahman, M. S Lundstrom, A. W Ghosh, Generalized Effective-Mass Approach for n-Type Metal-Oxide-Semiconductor Field-Effect Transistors on Arbitrarily Oriented Wafers, J. Appl. Phys. 97 (2005) 053702 (1-12).
DOI: 10.1063/1.1845586
Google Scholar
[8]
W. Wunderlicha, H. Ohta, K. Koumotoa, Enhanced effective mass in doped SrTiO3 and related perovskites, Phys. B. Cond. Mat., 404 (2009) Issue 16 2202–2212.
DOI: 10.1016/j.physb.2009.04.012
Google Scholar
[9]
F. Alema, M. Reich, A. Reinholz, K. Pokhodnya Effect of concurrent Mg/Nb-doping on dielectric properties of Ba0. 45Sr0. 55TiO3 thin films, J. Appl. Phys. 114 (2013) 084102 (1-12).
DOI: 10.1063/1.4819173
Google Scholar