Determination of Thin Film Ba0.5Sr0.5TiO3 Ferroelectric Effective Mass from I-V Characteristics Calculation Using Transfer Matrix Method

Article Preview

Abstract:

In this paper, we present current-voltage model characterization calculation of Ba0.5Sr0.5TiO3 ferroelectric-based solar cell to determine its effective mass. Numerical calculation was done using Transfer Matrix Method (TMM). Fitting between the calculations results with experiment data can be done by approximating the Ba0.5Sr0.5TiO3 effective mass value. Ba0.5Sr0.5TiO3 effective mass can be obtained when both data fit.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

375-378

Citation:

Online since:

February 2014

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2014 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] C. de Falco, M. Porro, R. Sacco, Verri, Maurizio, Multiscale modeling and simulation of organic solar cells,. Comp. Meth. in Appl. Mech. and Eng. 245-246 (2012) 102-116.

DOI: 10.1016/j.cma.2012.06.018

Google Scholar

[2] B. Lee, Electron Tunneling Time through a Heterostructure Potential Barrier Superlat. and Microstruct. 14 (1993) 295.

Google Scholar

[3] T.M. Abdolkader, H.H. Hassan, W. Fikry, O.A. Omar, Solution of Schrödinger in Double-Gate MOSFETs using Transfer Matrix Method, Electronics Letters 40 (2004) 20.

DOI: 10.1049/el:20045595

Google Scholar

[4] L. Hasanah, M. Abdullah, Sukirno, T. Winata, Kharurrijal, Model of a tunneling current in an anisotropic Si/Si1−xGex/Si heterostructure with a nanometer thick barrier including the effect of parallel–perpendicular kinetic energy coupling, Semicond. Sci. Technol, 23 (2008).

DOI: 10.1088/0268-1242/23/12/125024

Google Scholar

[5] B. Mulyanti, L. Hasanah, Khairurrijal, The Electrical Characteristics Model of GaN/InGaN/GaN Heterostructure in InGaN-based LED, Appl. Phys. Research 4 (2012) 98-104.

DOI: 10.5539/apr.v4n2p98

Google Scholar

[6] Khairurrijal, S. Miyazaki, M. Hirose, Electron Field Emission from a Silicon Subsurface Based on a Generalized Airy Function Approach, S J. Vac. Sci. Technol. B 17 (1999) 306.

DOI: 10.1116/1.590555

Google Scholar

[7] A. Rahman, M. S Lundstrom, A. W Ghosh, Generalized Effective-Mass Approach for n-Type Metal-Oxide-Semiconductor Field-Effect Transistors on Arbitrarily Oriented Wafers, J. Appl. Phys. 97 (2005) 053702 (1-12).

DOI: 10.1063/1.1845586

Google Scholar

[8] W. Wunderlicha, H. Ohta, K. Koumotoa, Enhanced effective mass in doped SrTiO3 and related perovskites, Phys. B. Cond. Mat., 404 (2009) Issue 16 2202–2212.

DOI: 10.1016/j.physb.2009.04.012

Google Scholar

[9] F. Alema, M. Reich, A. Reinholz, K. Pokhodnya Effect of concurrent Mg/Nb-doping on dielectric properties of Ba0. 45Sr0. 55TiO3 thin films, J. Appl. Phys. 114 (2013) 084102 (1-12).

DOI: 10.1063/1.4819173

Google Scholar