Fabrication and Characterization of Ferroelectric Thin Film BaxSr1-xTiO3 for Application in Light Intensity Detector

Article Preview

Abstract:

Ferroelectric thin film devices have been demonstrated using BaxSr1-xTiO3 (BST) as a light intensity detector. Various compositions of BST (x=0.7, 0.8 and 0.9) were prepared using Chemical Solution Deposition method. Solution of barium acetate, strontium acetate, titanium (IV) iso-propoxide in a mixture of acetic acid and ethylene glycol was spin-coated onto a silicon substrate. The BST film was annealed at 800°C. The microstructure and the crystalline characterization of BST were studied using X-Ray Diffraction (XRD) pattern with General Structure Analysis System (GSAS) refinement. The film thickness was measured using Scanning Electron Microscopy (SEM). The response of BST film to source of light intensity was investigated with IRC meter and resonator coupling. The results show that the resistance of a thin BST film decrease as the intensity of light increase. On resonator coupling, VOUT shows a slight increases as the intensity of light increases.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

358-362

Citation:

Online since:

February 2014

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2014 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] H. Haertling, Ferroelectric Ceramics : History and Technology, Journal of American Ceramic Society. 82 (1999) 797-818.

DOI: 10.1111/j.1151-2916.1999.tb01840.x

Google Scholar

[2] N. Setter, D. Damjonovic, L. Eng, G. Fox, S. Gevorgian, S. Hong, A. Kingon, H. Kohlstedt, N.Y. Park, G.B. Stephenson, I. Stolitchnov, A. K. Taganstev, D. V. Taylor, T. Yamada, S. Streiffer, Ferroelectric Thin Film : Review of Materials properties and application, J. Appl. Phys. 100 (2006).

DOI: 10.1063/1.2393042

Google Scholar

[3] A. Zomorrodian, N. J. Wu, Y. Song, S. Stahl, A. Ignatiev, E. B. Trexker, C. A. Garcia, Micro Photo Detector Fabricated of Ferroelectric–Metal Heterostructure, Jpn. J. Appl Phys. 44 (2005) 6105–6108.

DOI: 10.1143/jjap.44.6105

Google Scholar

[4] L. Kozielski, J. Erhart, F.J. Clemens, Light-Intensity-Induced Characterization of Elastic Constants and d33 Piezoelectric Coefficient of PLZT Single Fiber Based Transducers, Sensors. 13 (2013) 2419-2429.

DOI: 10.3390/s130202419

Google Scholar

[5] L. Pintilie, M. Alexe, A. Pignolet, D. Hesse, Bi4Ti3O12 Ferroelectric Thin Film Ultraviolet Detectors, Appl. Phys. Lett. 73 (1998) 342-344.

DOI: 10.1063/1.121828

Google Scholar

[6] J. S. Lee, J.S. Park, J. S. Kim, J.H. Lee, Y.H. Lee, S.R. Hahn, Perparation of (Ba, Sr)TiO3 Thin Film with High Pyroelectric Coefficients at Ambient Temperature, Jpn. J. Appl. Phys. 38 (1999) L574-L576.

DOI: 10.1143/jjap.38.l574

Google Scholar

[7] Y. Liu, A.S. Nagra, E.G. Erker, P. Periaswamy, T.R. Taylor, J. Speck, R. A. York, BaSrTiO3 Interdigitated Capacitors for Distributed Phase Shifter Applications, IEEE Microwave Guided Wave Lett. 10 (2000) 448-450.

DOI: 10.1109/75.888828

Google Scholar

[8] Darsikin, Study of Thin Film Optical Properties of (Ba, Sr)TiO3 for Solar Cell Applications With Chemical Engineering Solution Deposition, Proceedings of International Conferences on Physics and Aplications (2012) pp.53-56.

Google Scholar

[9] A. Jamaluddin, E. Susilowati, S. Budiawanti, Y. Iriani, Characterization of Multilayer Thin Film Ba0. 8Sr0. 2TiO3 For Lighting Sensor Application, Proceedings of International Conferences on Physics and Aplications (2012) pp.49-52.

Google Scholar

[10] Hikam, Irzaman, H. Darmasetiawan, P. Arifin, M. Budiman, M. Barmawi, Phyroelectric Properties of Lead Zirconium Titanate (PbZr0, 525. Ti0, 475O3) Metal Ferroelectric Metal Capasitor and Its Application for IR Sensor, Indonesian Journal Of Material Sciences. 6 (2005).

Google Scholar

[11] U. Adem, Preparation Of BaxSr1-xTiO3 Thin Film By Chemical Solution Deposition and Their Electrical Characterization, Master Thesis, Turkey : Middle East Technical University (2003).

Google Scholar

[12] P.W.M. Blom, R.M. Wolf, J.F. M Cillessen and M.P.C. M Krijn, Ferroelectric Schottky Diode, Phys. Rev. Lett. 73 (1994) 2107-2111.

DOI: 10.1103/physrevlett.73.2107

Google Scholar

[13] R. Rio, Masamori, Fisika dan Teknologi Semikondutor (Translate), PT. Pradnya Paramitha, Jakarta, (1999).

Google Scholar