Ohmic Contact in P-HEMT Wafer Using Metallization with Ge/Au/Ni/Au

Asban Dolah; Muhammad Azmi Abd Hamid; Mohamad Deraman; Ashaari Yusof; Nor Azhadi Ngah; Norman Fadhil Idham Muhammad

doi:10.4028/www.scientific.net/AMR.896.351

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 896Ohmic Contact in P-HEMT Wafer Using Metallization...

Ohmic Contact in P-HEMT Wafer Using Metallization with Ge/Au/Ni/Au

Abstract:

In this study, Ohmic contact were fabricated on AlGaAs HEMTs structure. A good metal-semiconductor interface are essentially for achieving lower specific contact resistance. An AlGaAs epi wafer was supply by the vendor. AlGaAs substrate was cleaned using wet chemical etching. Electrodes were fabricated through a sequenced of lithography, cleaning, sputtering and lift-off processes. The electrodes were made with metal layers of Ge, Au and Ni. Parameters such as metal thickness, annealing temperatures (from 300°C to 400°C) and annealing time were varies during fabrication process. Electrical characterizations after annealing are carried out using transmission line method (TLM) to obtain the specific contact resistance. Annealing temperature between 340°C to 360°C produced contact resistance below 5 x 10ˉ³Ω/cm^-2.

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Periodical:

Advanced Materials Research (Volume 896)

Pages:

351-353

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.896.351

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Online since:

February 2014

Authors:

Asban Dolah*, Muhammad Azmi Abd Hamid, Mohamad Deraman, Ashaari Yusof, Nor Azhadi Ngah, Norman Fadhil Idham Muhammad

Keywords:

Ohmic Contact, Transmission Line Measurement

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