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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 904Preparation and Microstructural Properties of...

Preparation and Microstructural Properties of Gallium Doped Zinc Oxide Thin Films for Organic Solar Cells

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Abstract:

Transparent conducting gallium doped zinc oxide (GaZnO) films were prepared by magnetron sputtering technique. The influence of growth temperature on the microstructural and optical properties of the films were investigated by means of X-ray diffraction (XRD), spectrophotometer and optical characterization method, respectively. The results show that all the samples are polycrystalline in nature having a hexagonal wurtzite type crystal structure with a preferred grain orientation in the (002) direction. The growth temperature significantly affects the crystal structure and optical properties of the samples. The film deposited at the growth temperature of 670 K possesses the largest grain grain, the minimum dislocation density and the lowest microstrain. The average visible transmittance and optical energy gap of the samples increase gradually with the increment of growth temperature.

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Periodical:

Advanced Materials Research (Volume 904)

Pages:

25-28

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.904.25

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Online since:

March 2014

Authors:

C. Lan, H. Wang, Z.Y. Zhong*, T. Zhang, C.Y. Yang, J. Hou

Keywords:

Magnetron Sputtering, Microstructure, Optical Property, Zinc Oxide Thin Film

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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