Influence of SiH4 Flow Rate on GaN Films with In Situ SiNx Mask on Sapphire Surface

Zhong Hui Li; Da Qing Peng; Wei Ke Luo; Liang Li; Dong Guo Zhong

doi:10.4028/www.scientific.net/AMR.904.29

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 904Influence of SiH4 Flow Rate on GaN Films with In...

Influence of SiH₄ Flow Rate on GaN Films with In Situ SiNx Mask on Sapphire Surface

Abstract:

Sapphire substrate was treated by SiH₄ under NH₃ atmosphere before GaN growth and nanosize islands SiN_x mask was formed on the substrate. Properties of GaN films were investigated by high resolution X-ray diffraction, photoluminescence and transmission electron microscopy. The results indicated that the SiH₄flow rate is an important factor affecting the size and density of SiN_x mask besides SiH₄ treatment time.The GaN films grown on the SiN_x-patterned sapphire substrate revealed an epitaxial lateral overgrowth mode, which affected 3D to 2D growth time and the microstructures of GaN films. The lowest FWHM value of (102) rocking curve was 286 arcsec. as the SiH₄ flow rate of 0.5sccm, with the calcultated edge-type dislocations density of 4.28×10⁹cm^-2.

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Periodical:

Advanced Materials Research (Volume 904)

Pages:

29-32

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.904.29

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Online since:

March 2014

Authors:

Zhong Hui Li*, Da Qing Peng, Wei Ke Luo, Liang Li, Dong Guo Zhong

Keywords:

Dislocation, GaN, MOCVD, SiN

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