Chemical Characterization and Electrical Properties of Indium Oxynitride Grown by Reactive Gas-Timing RF Magnetron Sputtering

A. Sungthong; P. Khomdet; S. Porntheeraphat; C. Hruanun; Amporn Poyai; J. Nukeaw

doi:10.4028/www.scientific.net/AMR.93-94.443

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 93-94Chemical Characterization and Electrical...

Chemical Characterization and Electrical Properties of Indium Oxynitride Grown by Reactive Gas-Timing RF Magnetron Sputtering

Abstract:

This work investigates changes in the chemical composition of InON thin films, grown by reactive gas-timing rf magnetron sputtering with different O2:N2 timing ratio characterized by Auger Electron Microscope (AES), Raman Spectroscopy which are well correlated with the electrical properties of films. The existence of nitrogen and oxygen in the deposited InON thin films was revealed by AES. Two Raman active optical phonons have been clearly observed and assigned to InN E1(TO) at ~470 cm-1 and E1(LO) at ~570 cm-1 and also shifted with different O2:N2 timing ratio. The carrier mobility of InON thin films was decreased when the ratio of O2:N2 timing is increased.

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Periodical:

Advanced Materials Research (Volumes 93-94)

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443-446

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.93-94.443

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Online since:

January 2010

Authors:

A. Sungthong, P. Khomdet, S. Porntheeraphat, C. Hruanun, Amporn Poyai, J. Nukeaw

Keywords:

Indium Nitride, Indium Oxynitride (InON), Reactive Gas-Timing, RF Magnetron Sputtering

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