Modeling and Simulation of Reflection Mode Gallium Nitride Photocathode

Xiao Qian Fu

doi:10.4028/www.scientific.net/AMR.933.52

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 933Modeling and Simulation of Reflection Mode Gallium...

Modeling and Simulation of Reflection Mode Gallium Nitride Photocathode

Abstract:

We made the modeling and simulation of the previously experimental GaN photocathode. During the construction of the GaN model, we found some important properties that influence the final simulation result, which includes: the settings of the grid, the definition of the cesium layer and the simulation method that is used when processing the calculation. The result shows that at some wavelengths, the spectral response changed very abruptly and its cut off wavelength was 380nm not 365nm. This early job supplies the inspiration for the further research work in this area.

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Periodical:

Advanced Materials Research (Volume 933)

Pages:

52-54

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.933.52

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Online since:

May 2014

Authors:

Xiao Qian Fu*

Keywords:

Gallium Nitride (GaN), Modeling, Photocathode, Simulation

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* - Corresponding Author

References

[1] O. Siegmund, J. Vallerga, J. McPhate, J. Malloy, A. Tremsin, A. Martin, M. Ulmer, and B. Wessels, Development of GaN photocathodes for UV detectors, Nucl. Instrum. Meth. A 567, 89-92(2006).

DOI: 10.1016/j.nima.2006.05.117

Google Scholar

[2] U. Shoichi, T. Yasufumi, N. Minoru, and K. Hirofumi, GaN-based photocathodes with extremely high quantum efficiency, Appl. Phys. Lett. 86, 103511-1-103511-3(2005).

DOI: 10.1063/1.1883707

Google Scholar

[3] X. Fu, et al., Optimizing GaN photocathode structure for higher quantum efficiency, Optik - Int. J. Light Electron Opt. 123, 765-768(2012).

DOI: 10.1016/j.ijleo.2011.05.032

Google Scholar

[4] M. Ulmer, B. Wessels, O. Siegmund, Progress in the fabrication of GaN photocathodes, Proc. SPIE 4650, 94-97 (2002).

Google Scholar

[5] J. Stock, G. Hilton, T. Norton, B. Woodgate, S. Aslam, and M. Ulmer, Progress on development of UV photocathodes for photon-counting applications at NASA GSFC, Proc. SPIE 5898, 58980F-1- 58980F-8 (2005).

DOI: 10.1117/12.617517

Google Scholar

[6] S Fuke, M Sumiy, T Nihashi, M Hagino, M Matsumoto, Y Kamo, M Sato and K Ohtsuka, Development of UV-photocathodes using GaN film on Si substrate, Proc. SPIE 6894, 68941F-1-68941F-7(2008).

DOI: 10.1117/12.770233

Google Scholar

[7] X Q Fu, B K Chang, X H Wang, B Li, Y J Du and J J Zhang, Photoemsission of graded-doping GaN photocathode, Chin. Phys. B 20, 03702-1-03702-5 (2011).

Google Scholar