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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 936The Preparation of the Highly Preferred...

The Preparation of the Highly Preferred Orientation of Wurtzite Structure Zinc Oxide Films

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Abstract:

Zinc oxide (ZnO) films are prepared on n-Si substrates by means of radio frequency (RF) magnetron sputtering method. The influences of substrate temperature on the crystal orientation and crystalline structure of ZnO films are investigated by X-ray diffraction (XRD) and Raman spectroscopy. The surface morphologies are studied by scanning electron microscope (SEM). It is indicated that ZnO films with wurtzite structure were successfully prepared. When the substrate temperature reduced to 100°C, the wurtzite structure with highly preferred orientation along the (002) plane of the ZnO film is prepared and the elliptical shape particles distributed uniformly on the ZnO film surface. The higher substrate temperature can offer more kinetic energy for mobility of particle on the surface to achieve other crystalline growth, resulting in the highly c-axis-oriented crystalline structure is destroyed.

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Periodical:

Advanced Materials Research (Volume 936)

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287-292

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https://doi.org/10.4028/www.scientific.net/AMR.936.287

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Online since:

June 2014

Authors:

Lei Lei Lan, Dan Zhou, Guang Rui Gu*, Bao Jia Wu, Lian Hua Tian

Keywords:

Magnetron Sputtering, Structure, Substrate Temperature, ZnO Thin Films

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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