Fabrication of Diamond Films on Cu Metal Substrates with Buffers (SiC or MoSi₂) by Hot Filament Chemical Vapor Deposition

Abstract:

Diamond films were grown by hot filament chemical deposition (HFCVD) on Cu metal substrate with two different buffer layers (SiC or MoSi2) synthesized by using magnetron sputtering technique. The components of films were investigated using X-ray diffraction (XRD) and laser Raman spectrum, and the surface morphology and structure were observed with scanning electron microscopy (SEM). Film adherence was investigated by micro-indentation. The results showed that the diamond films were successfully grown on Cu metal substrate with two different buffer layers. There were cracks on diamond film grown on 3µm SiC buffer layer and some SiC crystal whiskers were observed. Dense diamond films with bad adhesion were observed on 22µm MoSi2 buffered copper substrate. MoSi2 made chemical reaction with CH4 and produced MoC and Mo5Si3 on the process of HFCVD. Conclusion: the 3µm buffer layer of SiC can’t help deposit no cracking diamond film; the 22µm buffer layer of MoSi2 is helpful for depositing good diamond film, but can’t effectively improve the bond strength between diamond film and copper substrate.

• Periodical: Advanced Materials Research (Volume 936)
• Pages: 276-281
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.936.276
• Online since: June 2014
• Authors: Qi Zhao*, Ming Jiang Dai, Di Tan, Chun Bei Wei, Wan Qi Qiu, Hui Jun Hou
• Keywords: Copper Substrate, Diamond Films, Hot Filament Chemical Vapor Deposition (HFCVD), Interlayer, SEM

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