Highly Strained Silicon Nitride Thin Film Deposited by PECVD with Double Frequencies in Strained Silicon Technologies

Bin Shu; Jing Ming Chen; He Ming Zhang; Feng Zhu; Pu Li Quan; Jiang Yuan Gu; Rong Xi Xuan; Hui Yong Hu; Jian Jun Song

doi:10.4028/www.scientific.net/AMR.936.255

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 936Highly Strained Silicon Nitride Thin Film...

Highly Strained Silicon Nitride Thin Film Deposited by PECVD with Double Frequencies in Strained Silicon Technologies

Abstract:

The mechanism of high stress in silicon nitride thin film is studied systematically in this paper. The effects of the various process parameters on the stress in silicon nitride thin film deposited by PECVD are analyzed and discussed. The silicon nitride thin film with high compressive and tensile stress has been deposited on the optimized process parameters and the compressive and tensile stress are up to-1.38GPa and 866MPa, respectively. Finally, the method of further improving the stress in silicon nitride thin film is presented.

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Periodical:

Advanced Materials Research (Volume 936)

Pages:

255-258

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.936.255

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Online since:

June 2014

Authors:

Bin Shu*, Jing Ming Chen, He Ming Zhang, Feng Zhu, Pu Li Quan, Jiang Yuan Gu, Rong Xi Xuan, Hui Yong Hu, Jian Jun Song

Keywords:

Compressive Stress, PECVD, Silicon Nitride, Strained Silicon, Tensile Stress

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