Substrate Dependence of Microcrystalline Silicon Growth with SiH4 Diluted by Ar

Hua Cheng; Yong Chan Qian; Jun Xue

doi:10.4028/www.scientific.net/AMR.936.264

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 936Substrate Dependence of Microcrystalline Silicon...

Substrate Dependence of Microcrystalline Silicon Growth with SiH₄ Diluted by Ar

Abstract:

Microcrystalline Si films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) using Ar diluted SiH₄ gaseous mixture. The effects of the substrate on deposition rate, preferred orientation and roughness of the films were investigated. The results show that, the influence of the substrate surface chemical nature on the deposition rate is significant in the initial stage of the growth. And considering the crystallinity and roughness of the films, the substrate is favored in its preferred orientation with a rougher surface. Based on these results, it is confirmed that the combination of diffusion and etching is indispensable to describe the deposition of μc-Si with SiH₄ diluted by Ar, and the mechanism of μc-Si growth could be controlled by diffusion of Si and etching of the Ar⁺ on the film surface.

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Periodical:

Advanced Materials Research (Volume 936)

Pages:

264-268

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.936.264

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Online since:

June 2014

Authors:

Hua Cheng*, Yong Chan Qian, Jun Xue

Keywords:

Ar-Dilution, ECR-PECVD, Microcrystalline Silicon Film, Substrate Effect

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