Study of the Capacitive Properties of Strontium Barium Niobate Deposited by Radio Frequency Magnetron Sputtering

Abstract:

Ferroelectric Sr_xBa_1−xNb₂O₆ (SBN) thin films are deposited on Al/Si (100) substrates by radio frequency magnetron sputtering at room temperature. The nanograin sizes of the SBN thin films were analized by scanning electron microscopy (SEM). X-ray diffraction reveals that all the SBN thin films show an amorphous structure because they were deposited at room temperature.The capacitive properties of the SBN thin films were measured using metal ferroelectric insulation semiconductor (MFIS) structures. The memory window of the MFIS structure was characterized with a capacitance-voltage (C-V) method.

• Periodical: Advanced Materials Research (Volumes 941-944)
• Pages: 1306-1310
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.941-944.1306
• Online since: June 2014
• Authors: Sheng Chien Su, Wen Chung Chang, Chia Ching Wu*
• Keywords: Capacitive Properties, Grain Size, Strontium Barium Niobate

References

[1] S. Y. Wu, Memory Retention and Switching Behavior of Metal-Ferroelectric-Semiconductor Transistors, Ferroelectrics, Vol. 11 (1976), p.379.

DOI: 10.1080/00150197608236584

[2] H. Buhay, S. Sinharoy, W. H. Kasner, M. H. Francombe, D. R. Lampe and E. Stepke, Pulsed laser deposition and ferroelectric characterization of bismuth titanate films, Appl. Phys. Lett., Vol. 58 (1991), p.1470.

DOI: 10.1063/1.105200

[3] J. Valasek, Piezoelectricity and allied phenomena in Rochelle salt, Physical Review, vol. 17, pp.475-481, (1921).

DOI: 10.1103/physrev.17.475

[4] S. K. Hong, C. W. Suh, C. G. Lee, S. W. Lee, E. Y. Hang and N. S. Kang, Protection of SrBi2Ta2O9 ferroelectric capacitors from hydrogen damage by optimized metallization for memory applications, Appl. Phys. Lett., Vol. 77 (2000), p.76.

DOI: 10.1063/1.126882

[5] S. B. Xiong and S. Sakai, Memory properties of SrBi2Ta2O9 thin film prepared on SiO2/Si substrates, Appl. Phys. Lett., Vol. 75 (1999), p.1613.

DOI: 10.1063/1.124771

[6] S. B. Xiong, Z. M. Ye, X. Y. Chen, X. L. Guo, S. N. Zhu, Z. G. Liu, C. Y. Lin, Y. S. Jin, Ferroelectric SrxBa1-xNb2O6 optical waveguiding thin films on SiO2-coated Si(100) substrates, Applied Physics A, Vol. 67 (1998), p.313.

DOI: 10.1007/s003390050776

[7] Y. H. Xu, C. J. Chen, R. Xu, and J. D. Mackenzie, Ferroelectric Sr0. 6Ba0. 4Nb2O6 thin films by sol-gel process: electrical and optical properties, Physical Review, Vol. B 44, (1991) p.35.

[8] A. Magneli, The crystal structure of tetragonal potassium tungsten bronze, Arkiv föer kemi, Vol. 1, (1949) p.213.

[9] S. B. Majumder, P. S. Dobal, S. Bhaskar,R. S. Katiyar, Synthesis of Sr0. 5Ba0. 5Nb2O6 (SBN) thin films by sol-gel technique, Ferroelectrics, Vol. 241, (2000) p.287.

DOI: 10.1080/00150190008225003

[10] S. Hirano, T. Yogo, K. Kikuta and K. Ogiso, Preparation of strontium barium niobate by sol-gel method, Journal of the American Ceramic Society, Vol. 75, (1992) p.1697.

DOI: 10.1111/j.1151-2916.1992.tb04251.x

[11] S. S. Thöny, K. E. Youden, J. S. Harris Jr., L. Hesselink, Growth of epitaxial strontium barium niobate thin films by pulsed laser deposition, Applied Physics Letters, Vol. 65, (1994) p. (2018).

DOI: 10.1063/1.112780

[12] X. L. Guo, Z. G. Liu, X. Y. Chen, S. N. Zhu, S. B. Xiong W. S. Hu and C. Y. Lin, Pulsed laser deposition of SrxBa1-xNb2O6/MgO bilayered films on Si Wafer in waveguide form, Journal of Physics D: Applied Physics, Vol. 29, (1996) p.1632.

DOI: 10.1088/0022-3727/29/6/032

[13] M. Lee, R. S. Feigelson, Growth of epitaxial strontium barium niobate thin films by solid source metal-organic chemical vapor deposition, Journal of Crystal Growth, Vol. 180, (1997) p.220.

DOI: 10.1016/s0022-0248(97)00231-5

[14] M. J. Nystrom, B. W. Wessels, W. P. Lin, G. K. Wong, D. A. Neumayer, T. J. Marks, Nonlinear optical properties of textured strontium barium niobate thin films prepared by metalorganic chemical vapor deposition, Applied Physics Letters, Vol. 66, 1995 p.1726.

DOI: 10.1063/1.113347

[15] R. G. Mendes, E. B. Araújo, H. Klein, J. A. Eiras, Synthesis of strontium barium niobate ferroelectric thin films by an alternative chemical method, Journal of Materials Science Letters, Vol. 18, (1999) p. (1941).

[16] H. T. Lue, C. J. Wu, and T. Y. Tseng, Device modeling of ferroelectric memory field-effect transistor (FeMFET), IEEE Transactions on Electron Devices, Vol. 49, (2002) p.1790.

DOI: 10.1109/ted.2002.803626

[17] H. Sugiyama, T. Nakaiso, Y. Adachi, M. Noda and M. Okuyama, An improvement in C-V characteristics of metal-ferroelectric-insulator-semiconductor structure for ferroelectric gate FET memory using a silicon nitride buffer layer, Japanese Journal of Applied Physics, Vol. 39, (2000).

DOI: 10.7567/ssdm.1999.c-10-3