Effect of Al-Induced Crystallization on Structure of CdZnTe Thin Films Deposited by Radio Frequency Magnetron Sputtering

Abstract:

Different substrate temperature of CdZnTe films and one with Al-induced crystallization have been investigated by XRD, AFM and UV-spectrophotometry. It was shown that, as the substrate temperature varied from room temperature to 400 °C, improving the substrate temperature helps to enhance the grain size of CdZnTe film, and favours the preferential orientation (111). Moreover, Al-induced crystallization method can effectively reduce the crystallization temperature of the CdZnTe film so that the film can be for high-quality oriented crystallization in a lower temperature. In addition, Al-induced crystallization can make the surface roughness of the film at a small value that facilitates the later application of the film.

• Periodical: Advanced Materials Research (Volumes 941-944)
• Pages: 1288-1292
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.941-944.1288
• Online since: June 2014
• Authors: Dong Mei Zeng, Yin Yin Mu, Wan Liu, Hai Zhou, Chen Fei
• Keywords: Aluminum Induced Crystallization (AIC), CdZnTe Films, R.F. Magnetron Sputtering, Substrate Temperature, Surface Roughness (SR)

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